Low energy ion beam and plasma modification of materials : symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.

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Low energy ion beam and plasma modification of materials : symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.

editors, James M.E. Harper ... [et al.]

（Materials Research Society symposium proceedings, v. 223）

Materials Research Society, 1991

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注記

Presentations from the Symposium on Low Energy Ion Beam and Plasma Modification of Materials held at the Spring 1991 Materials Research Society Conference

Includes bibliographical references and index

内容説明・目次

内容説明

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

目次

  • Part I. Fundamentals of Ion-Material Interactions
  • Part II. Microwave Ion Sources for Deposition and Etching
  • part I. Fabrication processes and physical properties T. T. Chau, S. R. Mejia and K. C. Kao
  • 11. Structural and interfacial characteristics of thin (<10 nm) SiO2 films grown by electron cyclotron resonance plasma oxidation on [100] si substrates Tai D. Nguyen, D. A. Carl, D. W. Hess, M. A. Lieberman and R. Gronsky
  • 12. Cubic brown nitride prepared by an ECR plasma Y. Osaka, M. Okamoto and Y. Utsumi
  • 13. The ECR-plasma deposition of silicon nitride on a tunnel oxide J. C. Barbour, H. J. Stein and C. A. Outten
  • 14. ECR plasma etching technology for ULSIs Seiji Samukawa
  • 15. The mechanisms of reactive ion etching of SiOx (x<2) with electron cyclotron resonance and Kaufman ion sources R. A. Kant, C. R. Eddy, Jr, and B. D. Sartwell
  • 16. Shallow p+-n junction fabrication by plasma immersion ion implantation C. A. Pico, X. Y. Qian, E. Jones, M. A. Lieberman and N. W. Chang
  • 17. Electron cyclotron resonance hydrogenation of poly-si thin film transistors on SiO2/Si substrates Gand Liu, Robert A. Ditizio, Stephen J. Fonash and Nang Tran
  • 18. Electron cyclotron resonance hydrogen plasma induced defects in thermally grown and sputter depositied SiO2 W. L. Hallett, R. A. Ditizio and S. J. Fonash
  • Part III. Processing of High Tc Thin Films and Interfaces
  • Part III. Processing of High Tc Thin Films and Interfaces
  • Part IV. Electronic Materials
  • Part V. Electronic Materials
  • Part VI. Ion Processing of Oxides, Nitrides, Polymers and Carbon
  • Part VII. Ion Processing of Metals.

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