Ion beam modification of materials : proceedings of the Seventh International Conference on Ion Beam Modification of Materials, Knoxville, TN, USA, 9-14 September 1990
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書誌事項
Ion beam modification of materials : proceedings of the Seventh International Conference on Ion Beam Modification of Materials, Knoxville, TN, USA, 9-14 September 1990
North-Holland , Sole distributors for the USA and Canada, Elsevier Science Pub. Co., 1991
- part 1
- part 2
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注記
Reprinted from: Nuclear instruments and methods in physical research B59/60
内容説明・目次
内容説明
IBMM '90 was the seventh in a series of biennial International Conferences on ion beam processing of materials. The 213 papers in this two-volume set discuss experimental and theoretical work involving beam interactions with a wide range of materials, including semiconductors, metals, ceramics, insulators and polymers. Also included are papers on ion-enhanced deposition, tribology, beam-induced crystallization and amorphization, and recent developments in equipment design and experimental techniques. The quality and scope of the contributions demonstrate the growing importance and activity in the field of ion beam processing, as well as indicating new directions for ion beam processing and analysis.
目次
A selection. Sections: 1. Theory and Fundamentals. Range parameters of heavy ions implanted into boron films (M. Behar et al.). Loss of material from liquid metal collector surfaces during sputter deposition of gold (M.R. Weller et al.). 2. Experimental Techniques. Application of luminous ion beams in direct ion optical characteristics measurements (S.F. Belykh et al.). Experimental investigations of helium ion implantation in the first wall of JET (J. Zhu et al.). 3. Ion-enhanced Deposition. Ion bombardment during thin film deposition and its influence on mechanical and chemical surface properties (G.K. Wolf, W. Ensinger). Rf-sputter deposition of boron nitride thin films (S. Kikkawa et al.). 4. Beam-induced Crystallization and Amorphization. Structural relaxation in amorphous silicon and the role of network defects (S. Roorda et al.). Correlation between the elastic shear instability mechanism and empirical criteria for irradiation induced amorphization (J. Koike et al.). 5. Ion Beam Mixing. Ion-mixing-induced fractal growth in thin alloy films (B.X. Liu). High resolution microscopy study of niobium-sapphire interfaces modified by ion beam mixing (L. Romana et al.). 6. High Energy and High Dose Implantation. MeV-ion-induced damage in Si and its annealing (M. Tamura et al.). Mutation breeding by ion implantation (Z. Yu et al.). 7. Metals and Tribology. Interactions of energetic particles and clusters with solids (R.S. Averback et al.). Microstructural changes induced in Zr3A1 and U3Si during irradiation of the crystalline state (R.C. Birtcher, L.M. Wang). 8. Semiconductors. Ion implantation doping and isolation of III-V semiconductors (S.J. Pearton). Evaluation of electrical properties of vanadium silicide silicon Schottky diodes formed by ion implantaiton (V.P. Salvi et al.). 9. Insulators, Ceramics, and Polymers. A comparison between ion implantation into sapphire and polycrystalline alumina (N. Moncoffre). Formation of transition metal carbide thin films by dual ion beam deposition at room temperature (Z. Min et al.). 10. Diamond and Carbides. The chemical state of iron ions implanted into silicon carbide (C.J. McHargue et al.). Electrical conductivity and Raman spectra of C+-ion implanted diamond depending on the target temperature (S. Sato et al.). 11. High Temperature Superconductors. The influence of rapid thermal annealing on oxygen implant profiles in copper (L. Clapham et al.). Superconductivity and structure of ion-irradiated high-temperature superconductor thin films (G. Linker et al.). 12. New Directions for Ion Beam Processing. Advanced ion beam processing projects in Japan (I. Yamada).
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