Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991

著者

• International Conference on Defects in Semiconductors
• Davies, Gordon
• DeLeo, Gary Gerard
• Stavola, Michael

書誌事項

Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991

edited by Gordon Davies, Gary G. DeLeo and Michael Stavola

（Materials science forum, v. 83-87）

Trans Tech Publications, c1992

• : set
• pt. 1
• pt. 2
• pt. 3

タイトル別名

Defects in semiconductors 16

内容説明・目次

内容説明

Part 1. 1. Hydrogen in Elemental Hosts . 2. Transition Metal Impurities in Elemental Hosts . 3. Impurities in Elemental Hosts . 4. Irradiation Defects in Elemental Hosts . 5. Oxygen in GaAs, Si and Ge . 6. Theory . Part 2 . 7. Hydrogen in Compound Semiconductors . 8. Rare Earth Impurities in Silicon and Compound Semiconductors . 9. Transition Metal Impurities in Compound Semiconductors . 10. Donors in Compound Semiconductors . 11. EL2 And Anti-Site Related Defects . 12. Other Defects in III-V Semiconductors . 13. Growth Defects . Part 3 . 14. New Techniques . 15. Defects in SiC and Diamond . 16. Defects in II-VI Semiconductors . 17. Hetero-Epitaxy and Strained Layers . 18. Dislocations . 19. Superlattices . 20. Defects at Surfaces and Interfaces and in Low-Dimensional Structures . 21. Processing-Induced Defects . 22. Effects of Defects on Devices .

目次

Microstructure of Hydrogen and Dopants in Hydrogenated Amorphous Silicon Elastic Energy Loss due to the Reorientation of H around B in Silicon Kinetics of In-H and Cd-H Complexes in Silicon Diffusion and Drift of Hydrogen in Si and GaAs New Traps for H0 in Boron- and Phosphorus-Doped Si Hydrogen-Induced Platelets in Silicon: Separation of Nucleation and Growth An Isothermal Pumping Mechanism for the Introduction of High Hydrogen Concentrations in p+ Layers in Silicon Hydrogen Effusion from Monocrystalline B-Doped Silicon Effect of Multiple Trapping on Hydrogen Diffusion in Silicon Long-Range Correlations and Hydrogen Diffusion in Silicon Charge States of Donor-Hydrogen Pairs in Si: A Fragile Balance Rigid Rotor in a Tetrahedral Field: An Application to (H,Be) and (D,Be) in Silicon Electron Spin Resonance Study on Hydrogen Passivation of Donors in Silicon Interaction of Deuterium with Internal Surfaces in Silicon Measurements of the Diffusion Coefficient of Hydrogen in Silicon Monitored by Catalyzed Enhanced Oxygen Diffusion Jumps Measurements Relating to the Solubility of Hydrogen in Silicon at High Temperatures Donor-Hydrogen Complexes in Silicon Studied by Moessbauer Spectroscopy Depth Profiles for Hydrogen-Assisted Thermal Donor Formation in Silicon Passivation of Shallow Acceptors in Si and GaAs by Annealing in H2 Interstitial H and {H,B}, {H,C}and {H,Si} Pairs in Si and Ge Spectroscopy on Transition-Metal Defects in Silicon Transition-Metal Acceptor Pairs in Silicon Theoretical Interpretation of EPR Measurements on the Iron-Shallow Acceptor Pairs in Silicon Magneto-Optical Properties of Fe-Al Pairs in Silicon and the Discovery of a New Trigonal (Fei-Als)0 Pair <100> and<111> Configurations of Iron-Acceptor Pairs in Silicon Related to Stable and Metastable States Copper Related Defect Reactions in P-Type Silicon Interaction of a Copper-Induced Defect with Shallow Acceptors and Deep Centers in Silicon On the Motion of Iron in Silicon at Moderate Temperatures under High Electric Fields Interaction between Copper and Irradiation-Induced Defects in Crystalline Silicon Gettering of Copper and Iron to Extended Surface Defects in Silicon Shallow Excited States of the 1014 meV Cu Related Optical Center in Silicon Electronic Nature of Neutral Zinc in Silicon: FTIR-Absorption, Uniaxial Stress Measurements Diffusion of Gold in Amorphous Silicon Vibronic Interaction of a Gold-Related Center in Silicon The Gold Center in Silicon Electronic States of Fe4 and Mn4 Clusters in Silicon Diffusivities of 3D Transition-Metal Impurities in Silicon Uniaxial Stress Alignment of Pd- and Ni- in Silicon Electrical and Optical Properties of Titanium, Molybdenum and Tungsten Related Defects in Silicon Nickel Related Deep Levels in Germanium Magnetic Resonance from a Metastable Sulfur-Pair-Related Complex Defect in Silicon Piezospectroscopy of Two Beryllium Related Double Acceptors in Silicon On the Determination of Nitrogen in Czochralski Silicon NMR of Nonsubstitutional 12B after Implantation into P-Type Silicon Defect Impurity Complex Formation at High Donor Concentration in Silicon Electronic Structure of Isolated Aluminium Point Defects and Defect Pairs in Silicon Interaction and Dynamics of High-Temperature Defects in Carbon-Rich Silicon Photoluminescence of Edge-Defined Film-FED Growth Silicon EPR Studies of NTD-Produced as Donors in Isotopically Enriched 74Ge Single Crystals In Situ HVEM Study of Dopant Dependent Defect Generation in Silicon during 1 MeV Electron Irradiation Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge Interactions between Defects during the Annealing of Crystalline Silicon An Effect of the Beam Current and Energy of Fast Electrons on the Production Rates of A-Centres and Divacancies in n-Si The Pseudodonor Electronic States of a Metastable Defect in Silicon Studied by Uniaxial Stress Spectroscopy A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon Configurational Metastability of Carbon-Phosphorus Pair Defects in Silicon EPR Study of Multistable Ci-Ps Silicon Observation of a Configurationally Unstable Defect in Si ODMR and Electron Spin Echo Studies on the Non-Radiative Triplet State of the (V-O) Degrees Defect in Silicon Spin-Marking Method in Silicon: Interstitial and Pairing Defects Electrically Active Oxygen in Gallium Arsenide Oxygen Related Point Defects in GaAs New Evidences for the Defect Model of Photoconversion by Oxygen in Semi-Insulating GaAs Theoretical Studies on the Structure for the Core of Oxygen Thermal Donors in Silicon Reorientation of Stress Induced Alignment of Thermal Donors in Silicon Silicon Thermal Donors: Photoluminescence and Magnetic Resonance Study of Boron- and Aluminum-Doped Silicon Defect Distribution in Large CZ-Silicon Wafers Investigated by Positron Annihilation Spectroscopy Infrared Absorption by Interstitial Oxygen in Germanium-Doped Silicon Crystal IR Absorption in Monoisotopic Germanium Ab Initio Molecular Dynamics of Semiconductor Defects Impurity and Defect Induced Metastabilities in Tetrahedral Semiconductors Theory of Nitrogen and Platelets in Diamond Ab Initio Cluster Calculation of Hyperfine Interactions and Total-Energy Surfaces for N in Diamond, Silicon and Germanium Pressure Dependence of Formation and Migration Enthalpies for Atomic Diffusion in Si: Conjugate Gradient Minimization of Total Energy Many-Electron Effects in the Negative Silicon Vacancy Defects and Bandtails in Amorphous Silicon Theory of Second-Order Vibronic Reduction Factors for Deep Level Impurieties in Semiconductors Donor Bistability Induced by Electron-Phonon Coupling The Temperature Dependence of Trap Cross Sections Lattice Relaxation Effects on Deep Levels: Molecular Dynamics Calculations Recombination-Induced Defect Heating and Related Phenomena Electron-Hole Mechanism of Migration and Defect Interaction Diluted Magnetic Semiconductors with Cr2+ - Unusual p-d Interaction Stability of the Positions of an Interstitial Impurity Atom and the Electronic States in Semiconductors Local Mode Spectroscopy and Model Study for Assessing the Role of Light Defects in III-V Compound Semiconductors Hydrogen-Dopant Interactions in III-V Semiconductors Interaction of Hydrogen with Impurities in Semiconductors Carbon-Hydrogen Interaction in III-V Compounds Quantum Motion of Muonium in GaAs and CuCl Acceptor Passivation in GaP by Positively Charged Hydrogen Manifested by Donor-Acceptor Pair Luminescence Local Mode Spectroscopy of OH and NH Complexes in Semi-Insulating Gallium Arsenide Effects of Reverse Bias Annealing and Zero Bias Annealing on Ti/n-GaAs and Au/n-GaAs Schottky Barriers Containing Hydrogen Structure and Stability of Cadmium-Defect Complexes in III-V-Compounds Formed after H2-Plasma Treatment Shallow and Deep Radiative Levels of H-Complexes in GaAs Dissociation Kinetics of Hydrogen-Neutralized Si Donors and DX Centers in AlGaAs Equilibrium Sites and Relative Stability of Atomic and Molecular Hydrogen in GaAs Unintentional Hydrogenation of III-V Semiconductors during Device Processing Hydrogen Passivation of Shallow and Deep Centers in GaSb Hydrogen in InAs on GaAs Heterostructures: Diffusion Behavior, Electrical and Optical Effects Effects of Hydrogen in Si-Doped AlAs Energy Transfer in Rare-Earth-Doped III-V Semiconductors Dopant Enhancement of the 1.54 m Emission of Erbium Implanted in Silicon Theory of Substitutional Rare Earth Impurities in Semiconductors Spectroscopic Investigation of the Er Site in GaAs:Er Excitation Mechanism of the Erbium 4F Emissions in GaAs Electrical Properties of Yb, Er Doped InP Optically Detected Cyclotron Resonance Studies of Erbium and Ytterbium Doped InP Photoluminescent Properties of Yb Doped InAsP Alloys FTIR High Resolution Optical Study of GaAs:Fe Interstitial and Substitutional Mn in GaAs and GaP: Magnetic Resonance Studies Electronic Structure of Transition-Metal Impurities in GaAs1-xPx Alloys Optical and Spin Dependent Investigations of Mn2+ and V3+ in GaP Electron Paramagnetic Resonance Identification of a Trigonal Fe-S Pair in GaP Semi-Insulating InP:Cu Reinvestigation of the Optical Properties of the Iron Impurity in GaAs and InP Defect Metastability in III-V Compounds High Pressure Studies of Electronic States with Small Lattice Relaxation of DX-Centres in GaAs Vibrational Mode Fourier Transform Spectroscopy with a Diamond Anvil Cell: Modes of the Si DX Center and S Related Centers in GaAs A Photoluminescence Study of the Charge State of a Donor Level in GaAs Induced by Hydrostatic Pressure Laplace Transform DLTS Studies of the DX Centers in GaSb and AlGaAs Optically-Detected Magnetic Resonance of Donor States in AlxGa1-xAs (x 0.35) Doped with Group-IV and Group-VI Impurities Coexistence of Deep and Shallow Paramagnetic Excited States of the DX Center in GaAlAs Magnetic Resonance of X-Point Shallow Donors in AlSb:Te Bulk Crystals and AlSb MBE Layers Temperature Dependent Photoconductivity Saturation Proves Negative U of Si-DX Centers in AlGaAs Correlation Effects due to Ionized Defects in Semiconductors Capture Kinetics of the Individual DX Center Levels On the Kinetics of Photoconductivity in AlxGa1-xAs:Si DX Levels in Si-Doped AlxGa1-xAs Containing Boron Correlation between the Optically Detected Magnetic Resonance and the Photoconductivity of Photo-Ionized DX Centers in Sn-Doped AlxGa1-xAs Paramagnetic Resonance of Sn in AlGaAs Limitations of Ion Channeling for the Study of Bistable Defects Studies of Deep Level Transient Spectroscopy of DX Centers in GaAlAs:Te under Uniaxial Stress The Structure of DX Centers and EL2 Theory of the Optical Absorption and of the Magnetic Circular Dichroism of Antisite Related Defects in GaAs Photoquenching and Photorecovery of the EL2 Defect in n-GaAs under Hydrostatic Pressure Interaction of EL2 in Semiinsulating GaAs with above Bandgap Light The Isolated Arsenic Antisite Defect and EL2 - An ODMR Investigation of Electron Irradiated Galliumarsenide Uniaxial Stress and Zeeman Splitting Studies of EL2-Related Photoluminescence in Gallium Arsenide EPR of Anion- and Kation-Antisite-Defects in Plastically Deformed GaAs and GaP Generation of Anion-Antisite Defects in n-Type, p-Type and Semi-Insulating InP Studied by MCD-ODMR and MCD-ODENDOR Energy Levels Associated with the Metastable State of EL2 Re-Examination of the Configuration Coordinate Diagram of EL2 Vacancy in the Metastable State of the EL2 Defect in GaAs First-Principles Calculations of the Pressure Dependence of EL2 in its Stable State Opticallly Detected Electron-Nuclear Double Resonance of the Ms=0 State of a PGa-YPSpin-Triplet Center in GaP Electrical Activity and Diffusion of Shallow Acceptors in III-V Semiconductors Point Defects and their Reactions in Semiinsulating GaAs after Low Temperature e--Irradiation Photoluminescence Related to SiGa-SiAs Pairs in GaAs EPR Observation of a Deep Center with A p1 Electron Configuration in GaAs Intrinsic Defects in Electron Irradiated p-Type GaAs High Temperature NMR Study of Intrinsic Defects in GaAs Positron Annihilation in Electron Irradiated GaAs: Atomic Structure and Charge State of the Defects Electrical and Optical Properties of GaAs Doped with Li Metastable States in Semi-Insulating GaAs Revealed by Thermally Stimulated Current Spectroscopy Irradiation-Induced Electronic Levels Removed in the 280K Defect-Annealing Stage of n-GaAs Low Fluence Implantations in GaAs: A Mossbauer Spectroscopy Investigation of Individual and Overlapping Damage Cascades Influence of Fluorine on Electrical Properties and Complex Formation in GaAs Combined Study of Complex Defects in Semiconductors Defects in InP Investigated by the Positron Annihilation Technique Localized Vibrational Mode Absorption of Silicon Donors and Beryllium Acceptors in MBE GaAs, InAs and InSb Low Temperature GaAs: Electrical and Optical Properties Influence of Growth Rate and Temperature on the Structure of Low Temperature GaAs Electron Paramagnetic Resonance Studies of Low Temperature Molecular Beam Epitaxial GaAs Layers Effect of Low Temperature Growth on Impurity and Defect Incorporation in AlGaAs Grown by Mombe Characterization of GaAs/AlGaAs Heterostructures Grown by OMVPE Using Trimethylamine Alane as a New Aluminum Source Oxygen Behavior during Silicon Epitaxial Growth: Recent Advances Defects in MCZ Silicon with Various Oxygen and Carbon Contents Atomic Defect Configurations Identified by Nuclear Techniques Combination of Deep Level Transient Spectroscopy and Transmutation of Radioactive Impurities Identification of Band Gap States in Silicon by Deep Level Transient Spectroscopy on Radioactive Impurities Microscopy of Frenkel Pairs in Semiconductors by Nuclear Techniques Modern Muon Spectroscopic Methods in Semiconductor Physics Muon Stopping Sites in Semiconductors from Decay-Positron Channeling Polarized Spectroscopy of Complex Luminescence Centers ONP Spectroscopy of Defects in Silicon Nuclear Spin Polarization by Optical Pumping of Nitrogen Impurities in Semiconductors On the Analysis of Digital DLTS Data A Reevaluation of Electric-Field Enhanced Emission Measurements for Use in Type and Charge State Determination of Point Defects X-Ray Spectroscopy Following Neutron Irradiation of Semiconductor Silicon Spin Dependent Recombination at Deep Centers in Si - Electrically Detected Magnetic Resonance Excited Defect Energy States from Temperature Dependent ESR Dislocation Associated Defects in Gallium Arsenide by Scanning Tunneling Microscopy Transition Metals in Silicon Carbide (SiC): Vanadium and Titanium Photoluminescence Excitation Spectroscopy of Cubic SiC Grown by Chemical Vapor Deposition on Si Substrates Paramagnetic Defects in SiC Based Materials Acceptors in Silicon Carbide: ODMR Data Luminescence and Absorption of Vanadium (V4+): In 6H-Silicon Carbide Impurity-Defect Reactions in Ion-Implanted Diamond Native Defect Compensation in Wide-Band-Gap Semiconductors ODMR Investigations of A - Centres in CdTe Picosecond Energy Transfer between Excitons and Defects in II-IV Semiconductors Luminescence of A 5d-Centre in ZnS Interstitial Defects in II-VI Semiconductors: Role of the Cation d States PAC Study of the Acceptor Li in II-VI Semiconductors Generation of Metastable Shallow Donors under Cooling in Hexagonal II-VI Semiconductors Strain Relief in Thin Films: Can we Control it? Composition Modulation Effects on the Generation of Defects in In0.54Ga0.46As Strained Layers Electron-Trapping Defects in MBE-Grown Relaxed n-In0.05Ga0.95As on Gallium Arsenide Atomic Ordering in (110)InGaAs and Its Influence on Electron Mobility Dopant Diffusion in Si0.7Ge0.3 Characterisation of Dislocations in the Presence of Transition Metal Contamination Correlation of the D-Band Photoluminescence with Spatial Properties of Dislocations in Silicon Photoluminescence and Electronic Structure of Dislocations in Si Crystals Characterization of Point Defects in Si Crystals by Highly Spatially Resolved Photoluminescence Theoretical Study on the Structure and Properties of Dislocations in Semiconductors Solid State Processes at the Atomic Level Theory of Zn-Enhanced Disordering in GaAs/AlAs Superlattices Spatial Partition of Photocarriers Trapped at Deep Defects in Multiple Quantum Wells Picosecond Dynamics of Exciton Capture, Emission and Recombination at Shallow Impurities in Center-Doped AlGaAs/GaAs Quantum Wells Spectroscopy of Shallow Donor Impurities in GaAs/GaAlAs Multi-Quantum Wells Excitons Bound at Shallow Impurities in GaAs/AlGaAs Quantum Wells with Varying Doping Level Scanning Tunneling Microscopy Studies of Semiconductor Surface Defects The Atomic and Electronic Structure of Ordered Buried B(2x1) Layers in Si(100) Negative U Systems at Semiconductor Surfaces Ab Initio Calculations on Effect of Ga-S Bonds on Passivation of GaAs Surface - A Proposal for New Surface Treatment Two-Dimensionally Localized Vibrational Mode due to Al Atoms Substituting for Ga One-Monolayer in GaAs 0 Surrounding of Pb Defects at the (111)Si/SiO2 Interface 17O Hyperfine Study of the Pb Center Defects Induced by High Electric Field Stress and the Trivalent Silicon Defects at the Si-Si02 Interface Interstitial Defect Reactions in Silicon Processed by Reactive Ion Etching Anomalous Damage Depths in Low-Energy Ion Beam Processed III-V Semiconductors Photoluminescence Characterisation of the Silicon Surface Exposed to Plasma Treatment An Analysis of Point Defect Fluxes during SiO2 Precipitation in Silicon Deep States Associated with Copper Decorated Oxidation Induced Stacking Faults in Silicon Electrical Properties of Oxidation-Induced Stacking Faults in N-Type Silicon Study of Internal Oxide Gettering for CZ Silicon: Effects of Oxide Particle Size and Number Density and Assessment of Thermal Stability of Gettering for Copper and Nickel Morphology Change of Oxygen Precipitates in Cz-Si Wafers during Two-Step Heat-Treatment Annealing of Damage in GaAs and InP after Implantation of Cd and In Ion Implantation Induced Sheet Stress due to Defects in Thin (100) Silicon Films Observation of a Trivalent Ge Defect in Oxygen Implanted SiGe Alloys Comparison between Defects Introduced during Electron Beam Evaporation of Pt and Ti on n-GaAs Enhanced-Diffusion in Electron-Beam Doping of Semiconductors High Temperature Defect-Free Rapid Thermal Annealing of III-V Substrates in Metallorganic Controlled Ambient The Properties of Individual Si/SiO2 Defects and Their Link to 1/F Noise Hydrogen Induced Defects and Defect Passivation in Silicon Solar Cells A Study of Radiation Induced Defects in Silicon Solar Cells Showing Solar Cells Showing Improved Radiation Resistance Defects and Schottky Barrier Formation: A Positive Proof for Epitaxial Al on AlGaAs Schottky Diodes Recombination-Enhanced Diffusion of Be in GaAs Role of the Diffusivity of Be and C in the Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors Effects of the Substrate-Epitaxial Layer Interface on the DLTS Spectra in MESFET and HFET Devices The Study of Interfacial Traps of InP Metal-Insulator-Semiconductor Stuctures

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詳細情報

• NII書誌ID(NCID): BA13702321
• ISBN:
  • 0878496289
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Zürich, Switzerland
• ページ数/冊数: 3 v. (1604 p.)
• 大きさ: 25 cm
• 分類:
  • NDC8 : 428.8
• 親書誌ID:
  • BA00294222