Hot carriers in semiconductor nanostructures : physics and applications
Author(s)
Bibliographic Information
Hot carriers in semiconductor nanostructures : physics and applications
Academic Press, c1992
Available at 20 libraries
  Aomori
  Iwate
  Miyagi
  Akita
  Yamagata
  Fukushima
  Ibaraki
  Tochigi
  Gunma
  Saitama
  Chiba
  Tokyo
  Kanagawa
  Niigata
  Toyama
  Ishikawa
  Fukui
  Yamanashi
  Nagano
  Gifu
  Shizuoka
  Aichi
  Mie
  Shiga
  Kyoto
  Osaka
  Hyogo
  Nara
  Wakayama
  Tottori
  Shimane
  Okayama
  Hiroshima
  Yamaguchi
  Tokushima
  Kagawa
  Ehime
  Kochi
  Fukuoka
  Saga
  Nagasaki
  Kumamoto
  Oita
  Miyazaki
  Kagoshima
  Okinawa
  Korea
  China
  Thailand
  United Kingdom
  Germany
  Switzerland
  France
  Belgium
  Netherlands
  Sweden
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  United States of America
Note
Includes bibliographical references and index
Description and Table of Contents
Description
Nonequilibrium hot charge carriers play a crucial role in the physics and technology of semiconductor nanostructure devices. This book, one of the first on the topic, discusses fundamental aspects of hot carriers in quasi-two-dimensional systems and the impact of these carriers on semiconductor devices. The work will provide scientists and device engineers with an authoritative review of the most exciting recent developments in this rapidly moving field. It should be read by all those who wish to learn the fundamentals of contemporary ultra-small, ultra-fast semiconductor devices.
Table of Contents
J. Shah, Overview. B.K. Ridley, Electron-Phonon Interactions in 2D Systems. S. Das Sarma, Quantum Many-Body Aspects of Hot-Carrier Relaxation in Semiconductor Microstructures. W. P*adotz and P. Kocevar, Cooling of Highly Photoexcited Electron-Hole Plasma in Polar Semiconductors and Semiconductor Wells: A Balance-Equation Approach. A.P. Jauho, Tunneling Times in Semiconductor Heterostructures: A Critical Review. F. Rossi, R. Brunetti, and C. Jacoboni, Quantum Transport. S.M. Goodnick and P. Lugli, Hot-Carrier Relaxation in Quasi-2D Systems. I.C. Kizilyalli and K. Hess, Monte Carlo Simulation of GaAs-AlxGA1-xASField-Effect Transistors. J. Shah, Ultrafast Luminescence Studies of Carrier Relaxation and Tunneling in Semicondutor Nanostructures. W.H. Knox, Optical Studies of Femtosecond Carrier Thermalization in GaAs. J.F. Ryan and M.C. Tatham, Time-Resolved Raman Measurements of Electron-Phonon Interactions in Quantum Wells and Superlattices. R.A. H*adopfel, J. Shah, and S. Juen, Electron-Hole Scattering in Quantum Wells. M. Heiblum and U. Sivan, Ballistic Transport in Two-Dimensional Electron Gas. N. Yokoyama, H. Oshnishi, T. Mori, M. Takatsu, S. Muto, K. Imamura, and A. Shibatomi, Resonant-Tunneling Hot Electron Transistors. E.R. Brown, Resonant Tunneling in High-Speed Double Barrier Diodes. Chapter References. Index.
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