Narrow gap semiconductors : proceedings of the NATO Workshop, Oslo, Norway, 25-27 June 1991
著者
書誌事項
Narrow gap semiconductors : proceedings of the NATO Workshop, Oslo, Norway, 25-27 June 1991
A. Hilger, c1992
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注記
Includes bibliographical references
内容説明・目次
内容説明
Invited papers from this prestigious NATO workshop discuss the topics of growth techniques for narrow band gap semiconductors (MBE, CBE and MOVPE), the materials themselves and their properties. Applications of these materials in devices including infrared photodetectors, infrared diode arrangements and photovoltaic lead-salt detectors are studied.
目次
Infrared material requirements for the next generation of systems (R Balcerak). An overview of HgCdTe MBE technology (O Wu et al). Chemical beam epitaxy of HgCdTe (C J Summers et al). MOVPE growth of HgCdTe (S J C Irvine et al). MOVPE-grown MCT layers: low-temperature direct alloy growth versus IMP (R Druilhe et al). MOVPE growth and characterization of doped C^O dxHg^O1-xTe structures (C D Maxey et al). Control of the electrical properties of In-doped HgCdTe grown by MOVPE for IR detector applications (M L Young et al). Photovoltaic infrared sensor arrays in monolithic lead chalcogenides on silicon (H Zogg et al). Magnetron sputter epitaxy (MSE) of InSb on (100) GaAs and (100, 111) InSb for infrared detector applications (R Rousina et al). Type II superlattices for infrared detectors and devices (D H Chow et al). InSb-based materials for detectors (R A Stradling). HgCdTe status review with emphasis on correlations, native defects and diffusion (A Sher et al). Carrier localization in low-bandgap Hg^O 1-xCd^OxTe crystals, studied by photoluminescence (F Fuchs et al). The orientation independence of the CdTe-HgTe valence band offset as determined by x-ray photoelectron spectroscopy (C R Becker et al). Transport and magneto-optical properties of HgZnTe-CdTe superlattices (J Manasses et al). Novel kinetic model for diffusion in HgCdTe systems (Yu L Khait). HgCdTe infrared diode arrays (G L Destefanis). Highlights of recent results on HgCdTe thin film photoconductors (T Nguyen Duy et al). Responsivity uniformity of infrared detector arrays (P Norton et al). Operation and properties of narrow-gap semiconductor devices near room temperature using non-equilibrium techniques (T Ashley et al). Design of Hg^O 1-xCd^O xTe infrared detector arrays using optical immersion with microlenses to achieve a higher operating temperature (N T Gordon). Fabrication and assessment of optically immersed CdHgTe detector arrays (C L Jones et al). Long-wavelength 128 x 128 GaAs quantum well infrared photodetector arrays (B F Levine et al). Photovoltaic intersubband detectors for 3-5 ^D*m m using GaAs quantum wells sandwiched between AlAs tunnel barriers (H Schneider et al). Single quantum well intersubband infrared detector using GaAs-AlGaAs asymmetrical double-barrier structures (H C Liu et al). Integrated wavelength-selective GaGa/AlGaAs multi-quantum-well detectors (A Kock et al). Electron wave interference effects in CMT and quantum-size devices (G Nimtz et al). IR detection using subband absorption in delta-doping layers (F Muller et al).
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