Nonlinear optical diagnostics of laser-excited semiconductor surfaces
著者
書誌事項
Nonlinear optical diagnostics of laser-excited semiconductor surfaces
（Laser science and technology, v. 2）
Harwood Academic Publishers, c1989
- U.S. : est.
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注記
Translated from Russian
Includes bibliographical references and index
内容説明・目次
内容説明
The effect of pulsed laser annealing of ion-implanted semiconductors was discovered in the late 1970's. As a result researchers concentrated on the fundamental problems related to the absorption of laser radiation localized in time and space and on the possible application of lasers to microelectronics. Experiments on laser annealing have raised a series of fundamental questions, including the role of dense electron-hole plasmas in fast melting semiconductors, the stages of the melting process and the mechanism of laser-induced amorphisation. To answer these questions, which are only a small part of the full range of problems, it is vitally important to develop experimental techniques for the diagnostics of semiconductor surfaces and phase transitions. This book analyses the current concepts of laser beam interaction with semiconductors and the potential of using optical methods in diagnostics. Also discussed is the new information which may come from optical techniques on the structure of semiconductor crystal surfaces and phase transitions.
目次
- Introduction
- absorption of laser radiation by semiconductors and laser-induced phase transitions in near-surface layers
- linear optical methods for registration of the state and dynamics of semiconductor surfaces under laser irradiation
- nonlinear optical response of semiconductor surfaces and its correlation with lattice symmetry
- experimental study of the state of phase transitions of near-surface layers of semiconductor crystals by nonlinear optical methods
- conclusion.
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