Physics of hot electron transport in semiconductors
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Bibliographic Information
Physics of hot electron transport in semiconductors
World Scientific, c1992
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Includes bibliographical references
Description and Table of Contents
Description
This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.
Table of Contents
- Balance-equation approach to hot-carrier transport in semiconductors, X.L. Lei and N.J.M. Horing
- recent developments of magnetotransport theory, N.J.M. Horing et al
- effect of nonequilibrium phonon on the electron relaxation and transport, M. Lax and W. Cai
- nonequilibrium statistical operator in hot-electron transport theory, D.Y. Xing and M. Liu
- path integral study of polaron transport unde high electric field, Z.B. Su
- impurity resistivity under thermalized condition, C.S. Ting and L.Y. Chen
- nonequilibrium Green's function approach to dynamic properties of resonant-tunneling through double barrier structures, L.Y. Chen and C.S. Ting.
by "Nielsen BookData"
