Amorphous and crystalline silicon carbide III and other group IV-IV materials : proceedings of the 3rd international conference, Howard University, Washington, D.C., April 11-13, 1990

書誌事項

Amorphous and crystalline silicon carbide III and other group IV-IV materials : proceedings of the 3rd international conference, Howard University, Washington, D.C., April 11-13, 1990

G.L. Harris, M.G. Spencer, C.Y.-W. Yang (eds.)

(Springer proceedings in physics, v. 56)

Springer-Verlag, c1992

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注記

"Papers presented at the Third International Conference on Amorphous and Crystalline Silicon Carbide and Other Group IV-IV Materials (ICACSC 90), which was held at Howard University, April 11-13, 1990 in Washington, D.C."--Pref

Includes bibliographical references and index

内容説明・目次

内容説明

This volume details the current status of international research in silicon carbide and other IV-VI materials. It presents information on solid-solution growth of SiC compounds, the formation of SiGe heterostructures by ion implantation and improved SiC LEDs and FETs.

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