Amorphous and crystalline silicon carbide III and other group IV-IV materials : proceedings of the 3rd international conference, Howard University, Washington, D.C., April 11-13, 1990
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Bibliographic Information
Amorphous and crystalline silicon carbide III and other group IV-IV materials : proceedings of the 3rd international conference, Howard University, Washington, D.C., April 11-13, 1990
(Springer proceedings in physics, v. 56)
Springer-Verlag, c1992
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The Institute for Solid State Physics Library. The University of Tokyo.図書室
428.41:A12:37210062159
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Note
"Papers presented at the Third International Conference on Amorphous and Crystalline Silicon Carbide and Other Group IV-IV Materials (ICACSC 90), which was held at Howard University, April 11-13, 1990 in Washington, D.C."--Pref
Includes bibliographical references and index
Description and Table of Contents
Description
This volume details the current status of international research in silicon carbide and other IV-VI materials. It presents information on solid-solution growth of SiC compounds, the formation of SiGe heterostructures by ion implantation and improved SiC LEDs and FETs.
by "Nielsen BookData"