Gettering and deffect engineering in the semiconductor technology : GADEST '89 : proceedings of the 3rd International Autumn Meeting held in Garzau, German Democratic Republic, October 8-13, 1989

著者

• International Autumn Meeting, Gettering and Defect Engineering in Semiconductor Technology
• Kittler, M.

書誌事項

Gettering and deffect engineering in the semiconductor technology : GADEST '89 : proceedings of the 3rd International Autumn Meeting held in Garzau, German Democratic Republic, October 8-13, 1989

edited by M. Kittler

（Diffusion and defect data : solid state data, Pt. B . Solid state phenomena ; v. 6 & 7）

Sci-Tech Publications, 1989

内容説明・目次

内容説明

Solid State Phenomena Vols. 6-7

目次

Defect Engineering in VLSI-Technologies Gettering in Silicon by Oxygen Related Defects, Stacking Faults and Thin Polycrystalline Films Advances in the Understanding of Oxygen and Carbon in Silicon Investigations of the Structure, Formation, and Annihilation of Thermally Induced Donors in Silicon Effect of Volume Defects on Gold Gettering in CZ-SI Investigations of the Behaviour of Transition Metals in Silicon Defect Engineering for Bicmos-Technology Investigation of Gettering Phenomena in Semiconductors by Simultaneous Charge Collection Microscopy and Cathodoluminescence Implantation Induced Defect Modification in P Doped Bipolar Structures The Properties of the Defects in Heavy Implanted Silicon Defect Formation and Lateral Oxidation during Locos Processing Defects and Their Influence on Parasitic Devices in Integrated Circuits Volume Defect Formation in CZ SI Wafers and Related Electrical Effects Buried Layer Processing for Advanced Bipolar Technology Oxygen Precipitation in Silicon: Correlation of the Experimental Results Obtained with IR Spectroscopy, Preferential Etching and X-Ray Topography Gettering of Fast Diffusing Impurities by Radiation Defects in III-V Semiconductors On the Two-Step Nucleation in Internal Gettering for CMOS Fabrication Process Creation of Deep Denuded Zones in CZ Silicon Wafers Defect Engineering for ULSI Epitaxial Silicon Computer-Simulation of Gold-Redistribution in Silicon An Attempt to Simulate Oxygen Precipitation in Silicon Defect Formation in Dislocation-Free Silicon Containing Oxygen Influence of Preannealing on Oxygen Precipitation Silicon Intrinsic Gettering Durability and Effectiveness Effect of Heat Treatment on Defect Formation in Silicon Effects of Rapid Thermal Annealing Treatments on Electrical and Structural Properties of Silicon Defect Reactions in Semiconductors Electronic States in Plastically Deformed Silicon Defect Formation and Impurity Redistribution Due to the Electric Field and Elastic Stresses in Interface Regions Interaction of Point Defects with Interstitial Clusters, Dislocations and Impurities During in SITU Electron Irradiation of Silicon Crystals in the Electron Microscope Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon Impurity Gettering in Semicrystalline Silicon Solar Cells Formation and Defect Structure of Fe-B-Fe Complexes in Silicon Electrical Activity and Impurity Precipitation in Silicon Grain Boundaries Photo-Thermal Ionization Spectroscopy of Point Defects in Semiconductors Kink-Point Defect Interaction and Mobility of Dislocations in Semiconductors I. Conductivity Along Dislocations: Temperature Dependence and Nonlinear Effects II. Combined Resonance and Structure Peculiarities of Plastically Deformed Silicon Recrystallization and Defect Formation in Ion-Implanted Silicon Studied by Transmission Electron Microscopy Auger Recombination in Heavily-Doped p+ Silicon Photo-Capacitive Spectroscopy of Sulphur Atoms and Heat Treatment Defects in n-Si EPR Detection of Complex Platinum-Related Defects in Silicon Defect Kinetics and Impurity Diffusion During Hot Implants Into Silicon The Peculiarities of Deep Level Defect Passivation in SI by Atomic Hydrogen Dislocation Motion in Compound Semiconductors Dislocation Structures after Microdeformation of CaAs Single Crystals The Effect on the Schottky Barrier Height of Diffusion of Pt into Si From PtSi Electron Pulse Irradiation of Semiconductor Devices Charge Collection Microscopy in Gettering and Defect Engineering Lifetime in Silicon Scanning Infra-Red Microscope Investigation of Oxide Particles in Czochralski Silicon Heat-Treated for Intrinsic Gettering Laser Scanning Tomography: A Study of the Defect Cluster Nucleation and Growth in Silicon The Effect of Low-Energy Electron and Ion Beams on Properties of Near Surface Layers in Semiconductor Crystals The Capacitance Microscope: A Non-Contacting Stylus Technique for the Investigation of Semicionductor Surfaces Synchrotron Radiation X-Ray Studies on Strain in Semiconductor Crystals Positron Sudies of Thermal-Induced Defects in Silicon DLTS Investigations of the Carbon-Related Centers in Si The Noise Spectroscopy of Defects and Impurities in Compensated Silicon Determination of Generation Lifetime and Surface Generation Velocity by Sine-Voltage Sweep C-V Method Silicon Plates Homogeneity Diagnostics Method by Means of Semiconductor-Electrolyte Structure Surface Photovoltage Measurement Electrically Active Near-Surface Implantation Defects in Silicon and GaAs Trap-Spectroscopy in Insulating Layers Insulator Investigations in MIS Structures with Constant-Capacitance-DLTS Technique A Theoretical Model of the Surface Avalanche Method Application of High Tc Superconducting Thin Films in Microelectronics-Possibilities and Illusions Semiconductor Dynamic Memories Effect of Vibration Frequency and Sample Composition on Acoustic Properties of Y-Ba-Cu-O High-TC Superconductors SOI-Films by Zone Melting Recrystallization of Polycrystalline Silicon Heterogeneous Ion Synthesis of Isolating Layers in Si Spectroscopic Ellipsometry Studies of Silicon on Insulator Structures Silicon-on-Insulator Technology by Si-MBE Defect Microchemistry at the Si/SiO2 Interface Grown on Polycrystalline Silicon Sheets. Hydrogenation Effect Study Interfacial Defects Study of the Gallium Arsenide on Silicon Heterostructure Some Aspects of Interface and Surface Eingineering of AIII-BV-Compound-Semiconductors SOI by Silicon Dioxide Thermal Bonding Defect Engineering in SOI-Structures Formed by High Dose Implantation of Reactive Ions Strain and Critical Thickness of MBE Grown CaF2-Insulators on Si(111) Defect Control in Thick SOI-Films Produced by Zone Melting Recrystallization Defects and Their Influence on Parasitic Devices in Integrated Circuits Formation and Structure of Iron-Impurity Complexes in Silicon Defect Formation in Dislocation-Free Silicon Containing Oxygen

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詳細情報

• NII書誌ID(NCID): BA18733242
• ISBN:
  • 3908044049
• 出版国コード: lh
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Vaduz
• ページ数/冊数: xi, 607 p.
• 親書誌ID:
  • BA07841800