Gettering and deffect engineering in the semiconductor technology : GADEST '89 : proceedings of the 3rd International Autumn Meeting held in Garzau, German Democratic Republic, October 8-13, 1989
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書誌事項
Gettering and deffect engineering in the semiconductor technology : GADEST '89 : proceedings of the 3rd International Autumn Meeting held in Garzau, German Democratic Republic, October 8-13, 1989
(Diffusion and defect data : solid state data, Pt. B . Solid state phenomena ; v. 6 & 7)
Sci-Tech Publications, 1989
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内容説明・目次
内容説明
Solid State Phenomena Vols. 6-7
目次
Defect Engineering in VLSI-Technologies
Gettering in Silicon by Oxygen Related Defects, Stacking Faults and Thin Polycrystalline Films
Advances in the Understanding of Oxygen and Carbon in Silicon
Investigations of the Structure, Formation, and Annihilation of Thermally Induced Donors in Silicon
Effect of Volume Defects on Gold Gettering in CZ-SI
Investigations of the Behaviour of Transition Metals in Silicon
Defect Engineering for Bicmos-Technology
Investigation of Gettering Phenomena in Semiconductors by Simultaneous Charge Collection Microscopy and Cathodoluminescence
Implantation Induced Defect Modification in P Doped Bipolar Structures
The Properties of the Defects in Heavy Implanted Silicon
Defect Formation and Lateral Oxidation during Locos Processing
Defects and Their Influence on Parasitic Devices in Integrated Circuits
Volume Defect Formation in CZ SI Wafers and Related Electrical Effects
Buried Layer Processing for Advanced Bipolar Technology
Oxygen Precipitation in Silicon: Correlation of the Experimental Results Obtained with IR Spectroscopy, Preferential Etching and X-Ray Topography
Gettering of Fast Diffusing Impurities by Radiation Defects in III-V Semiconductors
On the Two-Step Nucleation in Internal Gettering for CMOS Fabrication Process
Creation of Deep Denuded Zones in CZ Silicon Wafers
Defect Engineering for ULSI Epitaxial Silicon
Computer-Simulation of Gold-Redistribution in Silicon
An Attempt to Simulate Oxygen Precipitation in Silicon
Defect Formation in Dislocation-Free Silicon Containing Oxygen
Influence of Preannealing on Oxygen Precipitation
Silicon Intrinsic Gettering Durability and Effectiveness
Effect of Heat Treatment on Defect Formation in Silicon
Effects of Rapid Thermal Annealing Treatments on Electrical and Structural Properties of Silicon
Defect Reactions in Semiconductors
Electronic States in Plastically Deformed Silicon
Defect Formation and Impurity Redistribution Due to the Electric Field and Elastic Stresses in Interface Regions
Interaction of Point Defects with Interstitial Clusters, Dislocations and Impurities During in SITU Electron Irradiation of Silicon Crystals in the Electron Microscope
Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon
Impurity Gettering in Semicrystalline Silicon Solar Cells
Formation and Defect Structure of Fe-B-Fe Complexes in Silicon
Electrical Activity and Impurity Precipitation in Silicon Grain Boundaries
Photo-Thermal Ionization Spectroscopy of Point Defects in Semiconductors
Kink-Point Defect Interaction and Mobility of Dislocations in Semiconductors
I. Conductivity Along Dislocations: Temperature Dependence and Nonlinear Effects II. Combined Resonance and Structure Peculiarities of Plastically Deformed Silicon
Recrystallization and Defect Formation in Ion-Implanted Silicon Studied by Transmission Electron Microscopy
Auger Recombination in Heavily-Doped p+ Silicon
Photo-Capacitive Spectroscopy of Sulphur Atoms and Heat Treatment Defects in n-Si
EPR Detection of Complex Platinum-Related Defects in Silicon
Defect Kinetics and Impurity Diffusion During Hot Implants Into Silicon
The Peculiarities of Deep Level Defect Passivation in SI by Atomic Hydrogen
Dislocation Motion in Compound Semiconductors
Dislocation Structures after Microdeformation of CaAs Single Crystals
The Effect on the Schottky Barrier Height of Diffusion of Pt into Si From PtSi
Electron Pulse Irradiation of Semiconductor Devices
Charge Collection Microscopy in Gettering and Defect Engineering
Lifetime in Silicon
Scanning Infra-Red Microscope Investigation of Oxide Particles in Czochralski Silicon Heat-Treated for Intrinsic Gettering
Laser Scanning Tomography: A Study of the Defect Cluster Nucleation and Growth in Silicon
The Effect of Low-Energy Electron and Ion Beams on Properties of Near Surface Layers in Semiconductor Crystals
The Capacitance Microscope: A Non-Contacting Stylus Technique for the Investigation of Semicionductor Surfaces
Synchrotron Radiation X-Ray Studies on Strain in Semiconductor Crystals
Positron Sudies of Thermal-Induced Defects in Silicon
DLTS Investigations of the Carbon-Related Centers in Si
The Noise Spectroscopy of Defects and Impurities in Compensated Silicon
Determination of Generation Lifetime and Surface Generation Velocity by Sine-Voltage Sweep C-V Method
Silicon Plates Homogeneity Diagnostics Method by Means of Semiconductor-Electrolyte Structure Surface Photovoltage Measurement
Electrically Active Near-Surface Implantation Defects in Silicon and GaAs
Trap-Spectroscopy in Insulating Layers
Insulator Investigations in MIS Structures with Constant-Capacitance-DLTS Technique
A Theoretical Model of the Surface Avalanche Method
Application of High Tc Superconducting Thin Films in Microelectronics-Possibilities and Illusions
Semiconductor Dynamic Memories
Effect of Vibration Frequency and Sample Composition on Acoustic Properties of Y-Ba-Cu-O High-TC Superconductors
SOI-Films by Zone Melting Recrystallization of Polycrystalline Silicon
Heterogeneous Ion Synthesis of Isolating Layers in Si
Spectroscopic Ellipsometry Studies of Silicon on Insulator Structures
Silicon-on-Insulator Technology by Si-MBE
Defect Microchemistry at the Si/SiO2 Interface Grown on Polycrystalline Silicon Sheets. Hydrogenation Effect Study
Interfacial Defects Study of the Gallium Arsenide on Silicon Heterostructure
Some Aspects of Interface and Surface Eingineering of AIII-BV-Compound-Semiconductors
SOI by Silicon Dioxide Thermal Bonding
Defect Engineering in SOI-Structures Formed by High Dose Implantation of Reactive Ions
Strain and Critical Thickness of MBE Grown CaF2-Insulators on Si(111)
Defect Control in Thick SOI-Films Produced by Zone Melting Recrystallization
Defects and Their Influence on Parasitic Devices in Integrated Circuits
Formation and Structure of Iron-Impurity Complexes in Silicon
Defect Formation in Dislocation-Free Silicon Containing Oxygen
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