Materials aspects of GaAs and InP based structures
著者
書誌事項
Materials aspects of GaAs and InP based structures
（Prentice Hall advanced references series, Engineering）
Prentice Hall, c1991
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注記
At head of title: AT&T
Includes bibliographical references and index
内容説明・目次
内容説明
Presents a comprehensive treatment of materials aspects of GaAs, InP and related alloys used in the fabricating of photonic and electronic devices. It includes discussions on point defects and dislocations in III-V compounds. Coverage focuses on state-of-the-art materials growth and characterization; physics and chemistry of point defects; and dislocations and the connection between defects and device reliability.
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