Materials aspects of GaAs and InP based structures

Author(s)

• Swaminathan, V.
• Macrander, A. T.

Bibliographic Information

Materials aspects of GaAs and InP based structures

V. Swaminathan, A.T. Macrander

（Prentice Hall advanced references series, Engineering）

Prentice Hall, c1991

Note

At head of title: AT&T

Includes bibliographical references and index

Details

• NCID: BA1888000X
• ISBN:
  • 0133468267
• LCCN: 90041035
• Country Code: us
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Englewood Cliffs, N.J.
• Pages/Volumes: xvii, 606 p.
• Size: 25 cm
• Classification:
  • LCC : TK7871.85
  • DC20 : 621.381/52
• Subject Headings:
  • LCSH : Semiconductors -- Materials
  • LCSH : Gallium arsenide semiconductors
  • LCSH : Epitaxy
• Parent Bibliography ID:
  • BA18880189