Semiconductor interfaces and microstructures
Author(s)
Bibliographic Information
Semiconductor interfaces and microstructures
World Scientific Pub., c1992
- : pbk
Available at / 17 libraries
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The Institute for Solid State Physics Library. The University of Tokyo.図書室
428.41:S227210061144
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Note
Includes bibliographical references
Description and Table of Contents
Description
Recently there have been major achievements in the study of semiconductor interfaces and microstructures for different materials and structural systems. Progress has been made through various experimental technologies and theoretical methods. This book provides an up-to-date review on these advances and includes the following major subjects: IV-IV, III-V and II-VI semiconductors and metal/semiconductor structures; new developments in growth methods; electric, optical, magnetic and structural characterization and properties; relative theories — electronic transport, phonos and interface modes; devices and applications. These materials are organized into four sections: General, III-V, II-VI and IV-IV, which offer comprehensive information and help readers in following the new developments in the research frontiers of the above fields.
Table of Contents
- Miniband conduction in semiconductor superlattices, A. Sibille et al
- interface modes in semiconductor superlattices, J. Menedez
- interfaces in GaAs/AlAs quantum well structures, D. Gammon et al
- optical and magneto-optical properties of narrow InGaAs-GaAs quantum wells, D.C. Reynolds and K.R. Evans
- wide-bandgap alloy II-IV compound semiconductors - the (Zn,Cd)(Se,Te) quaternary system, R.E. Nahory et al
- properties of Cd1-xMnxTe films and Cd1-xMnxTe-CdTe superlattices grown by pulsed laser evaporation and epitaxy, J.J. Dubowski
- a study of high temperature SiC device structures, M.M. Anikin et al
- Raman analyses of Si/Ge strained layer superlattices under hydrostatic pressure, I.P. Herman
- and others.
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