Materials fundamentals of molecular beam epitaxy

著者

• Tsao, Jeffrey Y.

書誌事項

Materials fundamentals of molecular beam epitaxy

Jeffrey Y. Tsao

Academic Press, c1993

注記

Includes bibliographical references and index

内容説明・目次

内容説明

The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE.

目次

Preface. List of Figures. List of Tables. Bulk Phase Equilibra. Free Energies and Open Systems. Elemental Phases. Alloy Phases. Thin Film Structure and Microstructure. Ordering and Clustering. Coherency and Semi-coherency. Surface Morphology and Composition. Surface Composition. Index.

「Nielsen BookData」 より

• NII書誌ID(NCID): BA19186644
• ISBN:
  • 0127016252
• LCCN: 92033038
• 出版国コード: us
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Boston ; Tokyo
• ページ数/冊数: xxi, 301 p.
• 大きさ: 23 cm
• 分類:
  • LCC : QC611.6.M64
  • DC20 : 620/.44
• 件名:
  • LCSH : Molecular beam epitaxy
  • LCSH : Surfaces (Physics)
  • LCSH : Surfaces (Technology)