Imperfections in III/V materials

書誌事項

Imperfections in III/V materials

volume editor, Eicke R. Weber

(Semiconductors and semimetals, v. 38)

Academic Press, c1993

この図書・雑誌をさがす
注記

Includes bibliographical references and index

内容説明・目次

内容説明

Through a series of critical reviews, this volume covers a range of topics from theory to materials issues, provides fundamental knowledge concerning imperfections in III/V compounds, and demonstrates the relevance of specific results for device performance and applications. The text examines microscopic models of structural and electronic defects in bulk and epitaxial III/V compounds. It provides an analysis of electronic properties in III/V compounds and discusses the influence of III/V compounds on device performance. The book should be of interest to students and researchers in materials science, electrical engineering, solid-state and device-oriented physics, surface science, and researchers, engineers and technicians in the semiconductor industry.

目次

  • Density-functional theory of sp-bonded defects in III/V semiconductors, U. Scherz and M. Scheffler
  • EL2 defect in GaAs, M. Kaminska and E.R. Weber
  • defects relevant for compensation in semi-insulating GaAs, D.C. Look
  • local vibrational mode spectroscopy of defects in III/V compounds, R.C. Newman
  • transition metals in III/V compounds, A.M. Hennel
  • DX and related defects in semiconductors, K.J. Malloy and K. Khachaturyan
  • dislocations in III/V compounds, V. Swaminathan and A.S. Jordan
  • deep level defects in the epitaxial III/V materials
  • structural defects in epitaxial III/V layers, J. Washburn et al
  • defects in metal/III/V heterostructures.

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詳細情報
  • NII書誌ID(NCID)
    BA20071741
  • ISBN
    • 0127521380
  • 出版国コード
    us
  • タイトル言語コード
    eng
  • 本文言語コード
    eng
  • 出版地
    San Diego
  • ページ数/冊数
    xiv, 498 p.
  • 大きさ
    24 cm
  • 親書誌ID
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