Imperfections in III/V materials
Author(s)
Bibliographic Information
Imperfections in III/V materials
（Semiconductors and semimetals, v. 38）
Academic Press, c1993
Available at / 44 libraries
-
The Institute for Solid State Physics Library. The University of Tokyo.図書室
428.41:S13:387210063082
-
No Libraries matched.
- Remove all filters.
Note
Includes bibliographical references and index
Description and Table of Contents
Description
Through a series of critical reviews, this volume covers a range of topics from theory to materials issues, provides fundamental knowledge concerning imperfections in III/V compounds, and demonstrates the relevance of specific results for device performance and applications. The text examines microscopic models of structural and electronic defects in bulk and epitaxial III/V compounds. It provides an analysis of electronic properties in III/V compounds and discusses the influence of III/V compounds on device performance. The book should be of interest to students and researchers in materials science, electrical engineering, solid-state and device-oriented physics, surface science, and researchers, engineers and technicians in the semiconductor industry.
Table of Contents
- Density-functional theory of sp-bonded defects in III/V semiconductors, U. Scherz and M. Scheffler
- EL2 defect in GaAs, M. Kaminska and E.R. Weber
- defects relevant for compensation in semi-insulating GaAs, D.C. Look
- local vibrational mode spectroscopy of defects in III/V compounds, R.C. Newman
- transition metals in III/V compounds, A.M. Hennel
- DX and related defects in semiconductors, K.J. Malloy and K. Khachaturyan
- dislocations in III/V compounds, V. Swaminathan and A.S. Jordan
- deep level defects in the epitaxial III/V materials
- structural defects in epitaxial III/V layers, J. Washburn et al
- defects in metal/III/V heterostructures.
by "Nielsen BookData"
