Semiconductor interfaces, microstructures and devices : properties and applications
Author(s)
Bibliographic Information
Semiconductor interfaces, microstructures and devices : properties and applications
Institute of Physics Pub., c1993
Available at / 21 libraries
-
The Institute for Solid State Physics Library. The University of Tokyo.図書室
428.41:S267210077538
-
No Libraries matched.
- Remove all filters.
Note
Includes bibliographical references
Description and Table of Contents
Description
A semiconductor interface is the contact between the semiconductor itself and a metal. The interface is a site of change, and it is imperative to ensure that the semiconducting material is sealed at this point to maintain its reliability. This book examines various aspects of interfaces, showing how they can affect microstructures and devices such as infrared photodetectors (as used in nightsights) and blue diode lasers. It presents various techniques for examining different types of semiconductor material and suggests future potential commercial applications for different semiconductor devices.
Written by experts in their fields and focusing on metallic semiconductors (Cadmium Telluride and related compounds), this comprehensive overview of recent developments is an essential reference for those working in the semiconductor industry and provides a concise and comprehensive introduction to those new to the field.
Table of Contents
Electric field induced localization in superlattices, Intersubband transitions and quantum well infrared photodetectors.. Real time spectroscopic ellipsometry monitoring of semiconductor growth and etching . X-ray reflectivity from heteroepitaxial. Spontaneous and stimulated emissions from optical microcavity structures. Radiative and nonradiative recombination in AlGaAs and InGaAsP heterostructures and some features of the corresponding quantum well laser diodes. Far-infrared cyclotron resonance of 2-dimensional electron gas in III-V semiconductor. Optics in lower dimensional quantum confined II-VI heterostructures. Growth and doping of silicon by low temperature molecular beam epitaxy. Point defects and charge traps in the Si/SiO^O2 system and related. Growth and characterization of silicon carbide polytypes for electronic.
by "Nielsen BookData"