The role of crystal growth for device development
Author(s)
Bibliographic Information
The role of crystal growth for device development
（Progress in crystal growth and characterization materials, v. 23）
Pergamon Press, 1992
1st ed
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Includes bibliographical references and index
Description and Table of Contents
Description
Device functions are the combination of physical and chemical properties of materials to transform one form of energy into the other which is useful to apparatus, machines, systems and human beings. Useful devices can be designed and produced only on the basis of a deep understanding of science, and the physics and the chemistry of the materials. This volume includes papers covering both the fundamental science and the applications of crystal growth. All the papers are by eminent Japanese researchers in the field and summarize recent and current achievements in the field in Japan.
Table of Contents
- Chapter Headings: Preface. Introduction. Diamond synthesis from the gas phase, M Kamo & Y Sato. E
- fect of dislocations on GaAs-MESFET threshold voltage, and the growth of dislocation-free, semi-insulating GaAs, S Miyazawa. Epitaxial growth of III-V compound semiconductor thin films and their device applications, Y Horikoshi. Single crystals of SiC and their application to blue LEDs, K Koga & T Yamaguc
- i. Single crystals of carbides and borides as electron emitters, S Otani & Y Ishizaw
- . Recent developments in high- T C single crystal growth in Japan: bulk and thin film, Y Hidaka & M Suzuki.
- Single crystals for radiation detectors, M Ishii & M Kobayas
- i. Improvement of growth process and characterization of quartz crystals, S Taki. Synthetic calcite single crystals for optical devices, S Hirano et al. Crystal growth and defect control in organic crystals, K Kojima. Subject index.
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