Ion implantation technology-92 : proceedings of the Ninth International Conference on Ion Implantation Technology, Gainesvile, FL, USA, September 20-24, 1992

著者

    • International Conference on Ion Implantation Technology (9th : 1992 : Gainesville, Fla.)
    • Downey, D. F.

書誌事項

Ion implantation technology-92 : proceedings of the Ninth International Conference on Ion Implantation Technology, Gainesvile, FL, USA, September 20-24, 1992

editors, D.F. Downey ... [et al.]

North-Holland, 1993

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注記

Includes bibliographical references and index

内容説明・目次

内容説明

Ion implantation technology has made a major contribution to the advanced in integrated circuit technology since the early 1970s. The ever-present need for accurate models in ion implanted species will become vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. The implications for ion implantation technology, as well as additional observations of needs and opportunities are discussed. The volume should be of value to all those who are interested in acquiring a more complete understanding of the current developments in ion implantation processes and comprehensive implant models.

目次

  • Part 1 Overviews: ion implantation in future MOS technology, A.F. Tasch
  • damage analysis and engineering for ion implantation in USLI process, M. Inoue, et al. Part 2 New implanter systems: high voltage implantation facility at GM research and environmental staff, G.W. Malaczynski, et al
  • performance characteristics of the Genus Inc 1510 high energy ion implantation system, J.P. O'Connor, et al
  • A2MV heavy ion Van De Graaff implanter for research and development, P.L.F. Hemment, et al. Part 3 New subsystems and components. Part 4 Materials science: SIMOX materials manufacturability, J. Margail
  • diffusion and lifetime engineering in Si, S. Coffa, et al
  • materials and device issues in the formation of sub 100mm junctions, C.M. Osburn, et al. Part 5 Process control and yield: improved gauge capability for 1/1 monitors using temperature compensation for resistivity measurements, W.H. Johnson, et al. Part 6 Contamination control. Part 7 Oxide survival and charging control: progress in water charging and charge neutralization, M.E. Mack, et al
  • reliability issues concerning thin gate SiO2 and SiO2/Si interface for ULSI applications, T.P. Ma. Part 8: ion implantation for large area optoelectronics on glass substrates, S. Tanaka, et al
  • low energy ion modifications of thin films and surfaces, U.J. Gibson
  • ion beam application for improved polymer surface properties, E.H. Lee, et al
  • application of a large area ion doping technique to a Si:H TFT for LCD, A. Yoshida, et al. Part 9 Overview: one historical perspective of ion implantation technology, R.G. Wilson
  • implanter manufacturing performance expectations for the mid 90s, D.T. Enloe
  • ion beams in prospect, J.H. Freeman. Part 10 New implanter systems: NV-GSD-a high current ion implantation system, T. Tamai, et al
  • the Nissin exceed-8000 high current ion implantation system, M. Naito, et al
  • an implantation system for MeV-mA ion - beams, R. Thomae, et al
  • the E500 - a new medium current high energy implanter, P. Van der Meulen and F.B. Ammon. Part 11 New subsystems and components: dosimetry design considerations for serial and batch ion implantation systems, P. Van der Meulen.

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