Chemistry for electronic materials : proceedings of Symposium C on Chemistry for Electronic Materials of the 1992 E-MRS Spring Conference, Strasbourg, France, June 2-5, 1992
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Bibliographic Information
Chemistry for electronic materials : proceedings of Symposium C on Chemistry for Electronic Materials of the 1992 E-MRS Spring Conference, Strasbourg, France, June 2-5, 1992
（European Materials Research Society symposia proceedings, v. 33）
North-Holland, 1993
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PRIORITY 2
"Reprinted from Materials science and engineering B17 (1-3)"--T.p. verso
Includes bibliographical references and indexes
Description and Table of Contents
Description
The chemical aspects of materials processing used for electronic applications, e.g. Si, III-V compounds, superconductors, metallization materials, are covered in this volume. Significant recent advances have occurred in the development of new volatile precursors for the fabrication of III-V semiconductor and metal [Cu, W] films by OMCVD. Some fundamentally new and wide-ranging applications have been introduced in recent times. Experimental and modeling studies regarding deposition kinetics, operating conditions and transport as well as properties of films produced by PVD, CVD and PECVD are discussed. The thirty papers in this volume report on many other significant topics also. Research workers involved in these aspects of materials technology may find here some new perspectives with which to augment their projects.
Table of Contents
Abbreviated. Semiconductor Compounds. New metal-organic precursors for growth of GaAs and Al x Ga 1-xAs by chemical beam epitaxy (A.C. Jones et al.). Improved GaAs/Ga1-xAixAs chemical beam epitaxy using tri-isopropylgallium (P.A. Lane et al.). New group III aluminium and gallium hydride precursors for metallo-organic vapour-phase epitaxy (R. Dorn et al.). A new organoindium precursor for electronic materials (V. Souliere et al.). Properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation (S. Koynov et al.). Metallic Films. A new metallo-organic chemical vapour deposition process for selective copper metallization (J.A.T. Norman et al.). Preparation of copper and copper oxide films by metallo-organic chemical vapour deposition using beta-ketoiminoato complexes (T. Gerfin et al.). Organometallic compounds: the chemist's contribution to new electronic materials (D. Blessman et al.). On the growth of epitaxial ultrathin films of #-Sn on CdTe(110) (P.J. Moller, A. Dittmar-Wituski). Synthesis of chromium silicide silicon carbide composite powders (P. Luo et al.). Studies on the nucleation and growth of chemical vapour deposited W on TiN substrates (E.S. Kim et al.). Reaction diffusion in Ta/GaAs contacts (Q. Han, R. Schmid-Fetzer). Superconductor Materials. Optimizing metallo-organic chemical vapour deposition of YBCO films substrates and P02 conditions (O.Y. Gorberto et al.). Insulating Materials. A model for low pressure chemical vapor deposition in a hot wall tubular reactor (W.G. Houf, J.F. Grcar). Molecular simulation: A microscopic approach to study the growth of native silicon oxide (V.V. Pham et al.). Heterogeneous systems based on precious metal powders and polymers (R. Kuzel et al.). Computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generation (A. Virzi, M. Porrini). Author index. Subject index.
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