Gettering and deffect engineering in semiconductor technology : GADEST '93 : proceedings of the 5th International Autumn Meeting held in Chossewitz, near Frankfurt(Oder), Germany, October 09-14, 1993

著者

• International Autumn Meeting, Gettering and Defect Engineering in Semiconductor Technology
• Grimmeiss, H. G.
• Kittler, M.
• Richter, H.

書誌事項

Gettering and deffect engineering in semiconductor technology : GADEST '93 : proceedings of the 5th International Autumn Meeting held in Chossewitz, near Frankfurt(Oder), Germany, October 09-14, 1993

editors, H.G. Grimmeiss, M. Kittler and H. Richter

（Diffusion and defect data : solid state data, Pt. B . Solid state phenomena ; v. 32 & 33）

SciTec Publications, 1993

注記

Includes bibliographical references and index

内容説明・目次

内容説明

Solid State Phenomena Vols. 32-33

目次

ULSI Technology - a Complex Device Manufacturing Process Semiconductor Isotope Engineering Crystalline Silicon for Solar Cells Light-Emitting Porous Silicon: A Defective Quantum Sponge Structure? Semiconducting Silicide-Silicon Heterostructures What Local-Density Calculations Can Teach about Semiconductor Surfaces, Interfaces and Defects Mechanisms of Transition Metal Gettering in Silicon Gettering in Silicon under Vacancy Generation Conditions Phosphorus External Gettering Efficiency in Multicrystalline Silicon Wafers Defect Engineering in Erbium-Doped Silicon Structure Technology PN Junction Formation by Two Steps Annealing Generation of the P-Induced Misfit Dislocations during the Diffusion in Silicon: Analytical Determination of the Criticy Conditions Processes of Defect Formation and Gettering under Dry Etching of Si and GaAs and Measurements of Diffusion Length Profile On the Interaction of Transition Metals with Silicon Grain Boundaries Dry Cleaning of Silicon Wafers in a Low Energy Hydrogen Plasma Reduction of Interfacial Carbon and Boron Contamination as Sources for Degradation of Epitaxial SiGe Layers Grown by MBE Misfit Strain Engineering in Heteroepitaxial Structures Surfactant-Mediated MBE of Strained-Layer III-V Semiconductor Heterostructures Transition Metal Gettering in Poly-Silicon for Photovoltaic Applications (Abstract) Properties of Hydrogen, Oxygen and Carbon in Si Solubility of Hydrogen in Silicon at High Temperatures Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350 Degrees C and 500 Degrees C Evolution of Oxygen Clusters and Agglomerates in Annealed Cz-Si at High Pressure - High Temperature Peculiarities in the Defect Behavior in Heat-Treated Cz-Si with a Low and High Oxygen Content New Evidences about Carbon and Oxygen Segregation Processes in Polycrystalline Silicon Oxygen and Copper Precipitation at the Silicon/Silicon Dioxide Interface The Role of Oxygen for Defect Formation in Oxygen-Rich Si- and Si1-xGex - Layers on Silicon Grown by APCVD Annealing Properties of N-Doped Cz-Si Crystals Oxygen-Related Clusters of Platinum in Silicon - an Electron Spin Resonance Study Formation and Properties of Tetranuclear Clusters of Manganese in Silicon EPR Identification of the Different Charge States of the Iron-Acceptor Pairs in Silicon Investigation of Deep Levels and Carrier Dynamics in SiC Films Process-Induced Defects in Silicon Technology Lattice Defects Induced in Si1-xGex Diodes by 1-MeV Electron Irradiation and their Influence on Electrical Characteristics Non-Equilibrium Impurity Diffusion in Silicon and Silicon Carbide Dopant Migration Caused by Point Defect Gradients Vacancy Assisted Diffusion of Si in GaAs: Microscopic Theory Investigation of Defect Generation and Precipitation in Antimony Implanted Silicon Electric-Dipole Spin Resonance on Extended Defects in Silicon Luminescence of Dislocations in SiGe/Si Structures On the Nature of Dislocation Luminescence in Si and Ge Defect Electrical Activity Study Using a Si(Ge) Heteroepitaxial Structure Properties of Dislocations and Point Defects in Fz-Si Metastable States Associated with Interfacial MISFIT Dislocations in Si/Si(Ge) Heterostructures Experimental Study of Anomalous Dislocation Kinks Drift in Germanium Single Crystals Cu Precipitation in Strained and Relaxing GexSi1-x Heteroepitaxial Layers Peculiarities of Defect Formation in SiGe/Si and SiGe/Ge Heterostructures The Influence of Oxidation Induced Stacking Faults on Electrical Parameters of a CCD Device Metals, Oxide Precipitates and Minority Carrier Lifetime in Silicon UHV-VLPCVD Heteroepitaxial Growth of Thin SiGe-Layers on Si-Substrates: Influence of Pressure on Kinetics and on Surface-Morphology Formation of High Quality SiGe/Si Heterostructures Liquid Phase Epitaxy of SiGe Structures Planar Defects and Misfit Dislocations in (001) GaAs/Ge Heterostructures MOCVD Grown with Different V/III Ratio Solvents Influencing the Morphology of Epitaxial Solution-Grown Strained Ge/Si Layers Deposition and P Doping of Si(1-x)Gex Layers in a Conventional Horizontal Tube APCVD Reactor without Load Lock System Misfit Dislocations in Strained Layer Epitaxy Stress Relaxation Mechanisms by Dislocations in the System Ge on Si Strain Relaxation and Threading Dislocation Density in Lattice-Mismatched Semiconductor Systems Relaxation Phenomena in Strained Si1-xGex Layers on Planar and Differently Patterned Si Substrates Equilibrium Configuration of Misfit Dislocations in Graded Buffers Evolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned Silicon Investigations of 2D Hole Gas in Strained Ge-Ge1-xSix Superlattices Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge1-xSix Multiple Quantum Well Structures Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5m) Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped Heterostructures Photoelectrical Interface Processes in Multilayer-Type Heterostructures Based on Silicon, II-VI Compounds and Photosynthetic Pigments Application of Electron Microscopy to Semiconductor Materials Research X-Ray Analysis of Strained Layer Configurations In Situ X-Ray Investigation of Relaxation Processes in Si1-xGex Layers on Silicon Substrate Determination of Superlattice Structural Parameters in Mismatched Epitaxial Structures Investigation of Strain in Si1-xGex/Si Heterostructures and Local Isolation Structures by Convergent Beam Electron Diffraction New Applications of Diffraction Analysis for Dislocation Structure in High Lattice-Mismatch MBE Grown Epitaxial Structures Detection of Threading Dislocations by EBIC in a SiGe Epilayer with Graded Buffer HREM and DLTS of 37(610) and 29(520 )[001] Tilt Grain Boundaries in Ge Bicrystals TEM In Situ Investigations of Interfacial Processes in the Pd/a-GeSi System Micro-Raman Investigations of Elastic and Plastic Strain Relief in Si1-xGex-Heterostructures Raman Study of the Phonon-Plasmon Modes in the Short Period GaAs/AlAs Superlattices Positron Annihilation on Thermal Defects in Cz-Si and Fz-Si Characterization of MBE Grown Si/Si1-xGex/Si Structures Using n+p-Diodes Investigations on Surface and Bulk Semiconductor Properties Using Wavelength Dependent TRMC Measurements Investigation of Recombination Properties of Ti Double Donor in Si Mapping Interfacial Roughness and Composition in Elemental Semiconductor Systems The Influence of the Electron Subsystem Excitation on the Kinetics and Dynamics of Dislocations

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詳細情報

• NII書誌ID(NCID): BA21152678
• ISBN:
  • 3908450004
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Untermuhleweg, Switzerland
• ページ数/冊数: xvii,630 p.
• 大きさ: 25 cm
• 親書誌ID:
  • BA07841800