Microcircuit Engineering 91 : proceedings of the International Conference on Microlithography, September 17-19, 1991, Rome, Italy
著者
書誌事項
Microcircuit Engineering 91 : proceedings of the International Conference on Microlithography, September 17-19, 1991, Rome, Italy
Elsevier, c1992
大学図書館所蔵 全2件
注記
"Reprinted from Microelectronic engineering 17 (1992)."
Includes bibliographies and index
内容説明・目次
内容説明
The 17th International Conference on Microlithography focused on the present dynamic international development of microfabrication using lithography and the related technologies. Bringing together leading international experts in the microcosm of modern semiconductor technology, the 7 invited and 109 contributed papers give an ongoing overview of the latest trends in the fabrication and application of microstructures.
目次
Abbreviated. Electron beam lithography. Progress in electron beam cell projection lithography (N. Saitou et al.). High-contrast marks for e-beam direct write made by reactive ion etching (M.N. Webster et al.). Direct measurement of thermoeffect influence on resist sensitivity in electron beam lithography (S.V. Babin et al.). Optical lithography. Deep-UV lithography for 64 megabit DRAM applications (Invited Paper) (M.C. Tipton, M.A. Hanratty). Registration accuracy in submicron devices (Invited Paper) (G. Potenza). Microlithography on complex-shaped surface (Yu.G. Geondzhian et al.). X-ray lithography. Current status and problems of synchrotron radiation lithography (Invited Paper) (H. Yoshihara). Low-stress gold electroplating for X-ray masks (W. Chu et al.). Ion beam lithography. Progress in ion projection lithography (Invited Paper) (A. Chalupka et al.). Focused ion beam repair of clear and opaque defects in X-ray masks (P.D. Prewett et al.). Resists. Lithographic properties of chemically amplified resists based on copolymers of 4-t-butoxycarbonyloxystyrene and sulfur dioxide (A.E. Novembre et al.). Enhanced photoresist focus latitude through the use of statistical design experimentation in photoresist formulation optimization (K. Bell et al.). Pattern transfer. Contrast enhancement of the resist latent image using exposure induced absorption amplification - Fundamentals, modelling, and applicability (R. Pforr et al.). Improvement of resist mask plasma etching durability by plasma chemical polymerization (V.F. Limanova et al.). Process modelling. A numerical approach to the solution of the Boltzmann transport equation for the analysis of hot-electron effects in semiconductors (Invited Paper) (A. Gnudi et al.). Simulation of optical lithography and inspection (Invited Paper) (A.R. Neureuther). Effect of resist development process on the determination of proximity function in electron lithography (S.V. Babin, A.A. Svintsov). Inspection and Testing. Focused ion beam repair of integrated circuits (P.D. Prewett et al.). Improved minority carrier lifetime performance in silicon for advanced applications (R.J. Falster). Laser Processing. Laser processing of integrated optical components (R. Scarmozzino et al.). The laser-plotter: A versatile lithographic tool for integrated optics and microelectronics (C. Arnone). Manufacturing science and fabrication. Microsystems: Current status and coming opportunities (Invited Paper) (E. Obermeier). The application of ohmic contacts to nanometric structures (P.A.F. Herbert et al.). T-gate and airbridge fabrication on MMICs by combining multivoltage electron-beam lithography and ion-beam lithography (R.G. Woodham et al.). Author Index.
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