Bibliographic Information

Physics and technology of heterojunction devices

edited by D. Vernon Morgan and Robin H. Williams

(IEE materials & devices series, 8)

P. Peregrinus Ltd. on behalf of the Institution of Electrical Engineers, c1991

Available at  / 9 libraries

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Description and Table of Contents

Description

Physics and Technology of Heterojunction Devices brings together the physics of engineering aspects of heterojunction semiconductor devices in one volume. The book draws on the knowledge of various experienced academics, and covers aspects of the physics of heterojunctions, resonant tunnelling effects in semiconductor heterojunction devices, characterisation of heterojunctions, high electron mobility transistors, heterojunction bipolar transistors, and heterostructures in semiconductor lasers. This valuable text is suitable for post-graduate device and electronic circuit engineers, and final year undergraduates.

Table of Contents

Chapter 1: Aspects of the physics of heterojunctions Chapter 2: Resonant tunnelling effects in semiconductor heterostructures Chapter 3: Simulation of semiconductor heterojunction devices Chapter 4: Characterisation of heterojunctions: Electrical methods Chapter 5: High electron mobility transistors Chapter 6: Heterojunction bipolar transistors Chapter 7: Heterostructures in semiconductor lasers Chapter 8: Novel heterojunction devices

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Details

  • NCID
    BA21299632
  • ISBN
    • 0863412041
  • LCCN
    92131586
  • Country Code
    uk
  • Title Language Code
    eng
  • Text Language Code
    eng
  • Place of Publication
    London, U.K.
  • Pages/Volumes
    xiv, 310 p.
  • Size
    24 cm
  • Classification
  • Subject Headings
  • Parent Bibliography ID
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