書誌事項

Physics and technology of heterojunction devices

edited by D. Vernon Morgan and Robin H. Williams

(IEE materials & devices series, 8)

P. Peregrinus Ltd. on behalf of the Institution of Electrical Engineers, c1991

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内容説明・目次

内容説明

Physics and Technology of Heterojunction Devices brings together the physics of engineering aspects of heterojunction semiconductor devices in one volume. The book draws on the knowledge of various experienced academics, and covers aspects of the physics of heterojunctions, resonant tunnelling effects in semiconductor heterojunction devices, characterisation of heterojunctions, high electron mobility transistors, heterojunction bipolar transistors, and heterostructures in semiconductor lasers. This valuable text is suitable for post-graduate device and electronic circuit engineers, and final year undergraduates.

目次

Chapter 1: Aspects of the physics of heterojunctions Chapter 2: Resonant tunnelling effects in semiconductor heterostructures Chapter 3: Simulation of semiconductor heterojunction devices Chapter 4: Characterisation of heterojunctions: Electrical methods Chapter 5: High electron mobility transistors Chapter 6: Heterojunction bipolar transistors Chapter 7: Heterostructures in semiconductor lasers Chapter 8: Novel heterojunction devices

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詳細情報

  • NII書誌ID(NCID)
    BA21299632
  • ISBN
    • 0863412041
  • LCCN
    92131586
  • 出版国コード
    uk
  • タイトル言語コード
    eng
  • 本文言語コード
    eng
  • 出版地
    London, U.K.
  • ページ数/冊数
    xiv, 310 p.
  • 大きさ
    24 cm
  • 分類
  • 件名
  • 親書誌ID
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