Semi-insulating III-V materials, Ixtapa, Mexico, 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21-24 April 1992
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Bibliographic Information
Semi-insulating III-V materials, Ixtapa, Mexico, 1992 : proceedings of the 7th Conference on Semi-insulating III-V Materials, Ixtapa, Mexico, 21-24 April 1992
Institute of Physics Pub., 1993
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Includes bibliographical references and index
Description and Table of Contents
Description
The 7th Semi-Insulating III-V Materials Conference brought together specialists from all over the world. This volume contains original research papers on growth, characterization, theory, device applications, and materials problems as they relate to semi-insulating III-V compounds, such as GaAs and InP. The latest conference focussed in particular on characterization, device preparation and low temperature MBE. The effects of defects on device performance are considered. Papers of particular note include those by Sumino and Yonenaga, Brozel and Tuezemen, Bassignana, Manasreh and Jantz.
Table of Contents
- Plenary presentation: Device applications of semi-insulating III-V materials: the changing demand (Jay). Defects: Recent changes in our understanding of EL2 in GaAs (Baraff)
- Hetero-antisite defects in III-V materials (Omling)
- Dynamic characteristics of dislocations and mechanical behaviour of III-V materials (Sumino and Yonenaga)
- Microdefect studies of Fe-doped semi-insulating InP (Fornari et al)
- Carrier control by neutron-transmutation doping of semi-insulating GaAs (Benchiguer et al)
- Evidence for the antisite defect BAs in SI and B co-implanted and B iplanted SI LEC--GaAs crystal (Wang et al)
- Properties of high-resistivity Li-diffused GaAs (Gislason)
- Semi-insulating InP obtained by co-implantation of Mg and Ti (Salvi et al)
- The activation of MeV Si+ implants in Si-GaAs+ (Chengzhou at al). Bulk Growth: Current issues in the bulk growth of SI III-V materials (Mueller et al)
- Low-dislocation 4" ... GaAs single crystal growth under arsenic atmosphere (Kawase et al)
- Incorporation/Extraction of carbon and boron during semi-insulating LEC GaAs growth: roles of hydrogen and carbon monoxide in the Puller atmosphere (Nishio and Fujita)
- Structural and electrical characteristics of undoped LEC GaAs crystals grown from slightly Ga-rich melts: a new approach (Weyher et al)
- Improved uniformity of Si-VB GaAs by annealing (Freidenrich et al)
- Photoluminescence investigation of ingot- and wafer-annealing effects in semi-insulating GaAs (Ka et al). Epitaxial Growth: MBE heterostructure device instabilities related to interfacial carbon impurities (Gray et al)
- S.I.InP:Fe Hydride-VPE for mushroom type lasers (G^"obel et al)
- Hydride vapour phase epitaxial regrowth of SI-InP:Fe on non-planar surfaces for device fabrication (Lourdudoss and Kjebon). Low temperature growth: relation between structure and lifetime and minority carriers in MBE BaAs grown at low temperatures (Liliental-Weber et al)
- Conductivity and Hall-effect measurements on MBE GaAs grown at low temperatures (Look et al)
- Infrared absorption of localized vibrational modes of silicon and beryllium in low temperature molecular beam epitaxial GaAs (Manasreh et al)
- Quantitative analysis of electron traps in annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy at low temperature with a novel zero quiescent bias voltage transient current spectroscopy technique (Lau et al)
- Semi-insulating epitaxial semiconductors: the case of InP (Garcia et al)
- Structure investigations of low-temperature MBE grown InAlAs layers on InP substrate (Werner et al). Substrates: Nondestructive high resolution resistivity topography of semi-insulating GaAs and InP wafers (Jantz et al)
- Optical wafer level mapping for MMIC processing (Kanber et al)
- X-ray topography used as a routine tool in the evaluation of the crystal quality of GaAs substrate wafers (Bassignana and Macquistan)
- Photoluminescence pre-screenng of LEC semi-insulating GaAs substrates for the potential backgating performance of MESFET circuits (Miner et al)
- Fe doped semi-insulatinig indium phosphide substrate characterization for device applications (Grattepain and Huber)
- Quantitative photoelastic characterization of residual strain and its correlation with dislocation density profile in semi-insulating LEC-grown GaAs wafers (Yamada)
- Scanning birefringence mapping of semi-insulating GaAs wafers (Clayton et al)
- Dark-field infrared microscopy investigations of precipitates in bulk gallium arsenide (Brozel and Tuezemen). Characterization: The correlation of reverse contrast absorption imaging with photo-quenchable deep acceptor centres in semi-insulating LEC GaAs (Tuezemen and Brozel)
- Enhanced and persistent photocurrents in bulk semi-insulating GaAs at low temperatures (Michel)
- Time evolution of photo-EPR and photo-electrical data on bulk semi-insulating GaAs (Benchiguer et al)
- The role of deep traps in photoconductivity transients in S.I. GaAs (Santic et al)
- Study of deep acceptor states in undoped semi-insulating GaAs with low carbon content by transient spectroscopy techniques (Dubecky et al)
- Properties of the Fe acceptor level in InP under hydrostatic pressure (Babinski et al)
- Infrared absorption in proton- and deuteron implanted semi-insulating InP:Fe (Fischer et al)
- Investigation of deep-level states in bulk and low temperature MBE semi-insulating GaAs by admittance transient spectroscopy (Dubecky et al)
- Characterization of semi-insulating InP:Cu (Leon et al)
- Effect of micro-uniformity on electron mobility of LEC undoped SI-GaAs crystals (Wang et al)
- Photoreflectance characterization of LEC-SI GaAs and Fe-InP (Bhimnathwala and Borrego)
- Characterization of active channel processing by PIMR (Heimlich et al)
- NMR Characterization of stoichiometry related point defects in SI-GaAs (Suemitsu) . Devices: Vth control in GaAs by substrate parameters (Kaminaka et al)
- Analytical model of the frequency-dependent output conductance of GaAs MESFETs on semi-insulating substrates (Shulman)
- Analysis of the steady and transient characteristics of the leakage current in GaAs integrated circuits (Gual et al)
- Numerical simulation of generation in n-SI-n structures (Viallet et al)
- I-V behaviour of p/SI-InP:Fe/n and p/n/Si-InP:Fe/n configurations related to leakage current in buried heterostructure lasers with current blocking SI-InP:Fe (Lourdudoss et al)
- Characterization of deep level traps in ultrasubmicron modulation-doped field-effect transistors on InP substrate using improved photo-inducted current spectroscopy (PICS) (Sung and Das).
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