Plasma properties, deposition and etching

著者

書誌事項

Plasma properties, deposition and etching

editors, J.J. Pouch and S.A. Alterovitz

(Materials science forum, v. 140-142)

Trans Tech Publications, c1993

タイトル別名

Materials science forum

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注記

Includes index

内容説明・目次

内容説明

Containing 42 invited papers, this fine book covers a broad range of subjects on plasmas and applications. In the first section, plasma properties and methods used to characterize the plasma are addressed. Many of these papers also cover deposition or etching of particular materials. The second part focuses on the application of various plasma techniques used to deposit thin films, and on the resulting film properties. Finally, the application of plasma etching to the fabrication of silicon-based circuits, plasma etching of III-V compound semiconductors and other processing applications are discussed in the third and last section.

目次

PECVD of Silicon Dioxide from TEOS/Oxygen Mixtures Analysis and Design of Plasma Chemical Reactions Based on Quantum Chemical Methods Advanced Simulation of Dry Etching Process Technology Anisotropic ECR Plasma Etching with Low-Energy Ions High-Rate Sputtering with Electron Cyclotron Resonance and Electric-Mirror Excitation Modified ECR Plasma Deposition DC Saddle-Field Plasma-Enhanced Vapour Deposition Theoretical Characterization of Electron Energy Distribution Function in RF Plasmas Ion Energy Distributions and Sidewall Profiles in Reactive Ion Etching Dissipative Structures and Nonequilibrium Phenomena in Plasma-Surface Interaction Source of Atomic Oxygen and its Application to Material Oxidation Practical Applications of In-Situ Plasma-Etching Diagnostic Techniques Laser-Aided Diagnostics of Processing Plasmas Radical Kinetics in Processing Plasmas: Optical Diagnostics of Gas Phase and Surface Reactions Negatively Charged Particles in Fluorocarbon RF Etch Plasmas: Density Measurements Using Microwave Resonance and the Photodetachment Effect Biased Electron Cyclotron Resonance Chemical-Vapor Deposition of Silicon Dioxide Inter-Metal Dielectric Thin Films TEOS-Based Oxides: Deposition Dependent Properties Plasma Enhanced Chemical Vapor Deposited Silicon and Silicon Dioxide Films for Indium Phosphide MISFET Technology Physical and Electrical Properties of Silicon Nitride and Oxynitride Films Prepared by Plasma Enhanced CVD Preparation and Properties of PECVD Silicon Nitride Films from SiH4 + NH3 and/or NF3 and SiF4+ NH3 Gas Mixtures Bonding Configuration and Defects in Glow-Discharge Amorphous SiNx:H Films Deposited at 300 DegreesC and 500 DegreesC Doped Glasses for ULSI-Technology: Integration of Molecular Engineering and Plasma-CVD Growth Processes and Defect Densities in Hydrogenated Amorphous Silicon Alloys Sputter Deposition of Thin Films for High Mobility Poly-Si TFT Fabrication Ion Assisted Thin Film Growth in Dual Microwave/Radio Frequency Plasmas High Powered Pulsed Plasma Enhanced Deposition of Thin Film Semiconductor and Optical Materials Plasma-Enhanced Chemical Vapour Deposition of Coatings in the System Ti-B-N Plasma-Enhanced Metalorganic Chemical Vapor Deposition for High Temperature Superconducting Thin Film Low Pressure and Low Temperature Synthesis of Diamond Films Using Magneto-Microwave Plasma CVD Thermal Plasma Chemical Vapor Deposition Thermally Sprayed Coatings for Electrical and Electronic Applications ECR Plasma Etching Technology for ULSI Evaluation of Substrate Degradation in Plasma Etch Processes Using Thermal Wave Analysis Plasma Etching of Patterned Tungsten Microwave Plasma Oxidation of Silicon Hydrogen Interaction with Disordered Silicon Damage Assessment of Dry Etched III-V Semiconductors for Nanoelectronics Reactive Ion Beam Etching for Microcavity Surface Emitting Laser Fabrication: Technology and Damage Characterization Alkane Plasma Etching of Gallium Arsenide Effects of ECR-Plasma Excitation in GaAs MBE Growth Plasma Treatment of Polymers for Improved Adhesion Properties Study of Dry Development in Terms of Resist and Development Method

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詳細情報

  • NII書誌ID(NCID)
    BA21753645
  • ISBN
    • 087849670X
  • 出版国コード
    sz
  • タイトル言語コード
    eng
  • 本文言語コード
    eng
  • 出版地
    Aedermannsdorf, Switzerland
  • ページ数/冊数
    x, 742 p.
  • 大きさ
    25 cm
  • 親書誌ID
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