Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993

著者

• International Conference on Defects in Semiconductors
• Heinrich, Helmut
• Jantsch, W. (Wolfgang)

書誌事項

Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993

edited by Helmut Heinrich and Wolfgang Jantsch

（Materials science forum, v. 143-147）

Trans Tech Publications, c1994

• : set
• pt. 1
• pt. 2
• pt. 3

タイトル別名

Defects in semiconductors 17

内容説明・目次

内容説明

This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.

目次

Defects in Heterogeneous Solids - From Microphysics to Macrophysics 35 Years of Defects in Semiconductors: What Next? Optical Spectroscopy of Defects in Diamond: Current Understanding and Future Problems Isotope Dependence of the Frequency of Localized Vibrational Modes in Diamond Native Paramagnetic Defects in Diamond Films Titanium Impurity in Diamond Theory of Nitrogen Aggregates in Diamond: The H3 and H4 Defects Nitrogen and Nitrogen-Vacancy Complexes in Diamond Time Resolved Photoluminescence and Optically Detected Magnetic Resonance Investigations on Synthetic Diamond Endor and ODEPR Investigation of the Microscopic Structure of the Boron Acceptor in 6H-SiC Nitrogen Donors, Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide (4H-SiC) Magnetic Circular Dichroism and Optically Detected EPR of a Vanadium Impurity in 6H-Silicon Carbide Boron in Cubic Silicon Carbide: Dynamic Effects in ESR ODMR Studies of MOVPE-Grown GaN Epitaxial Layers Iron Acceptors in Gallium Nitride (GaN) Donors in Wurtzite GaN Films: A Magnetic Resonance and Photoluminescence Study The Bound Exciton Model for Isoelectronic Centers in Silicon Near-Surface Reactions of Gold and Silver in Silicon A New Photoluminescent Center in Mercury-Doped Silicon Electrical and Optical Characterization of Magnesium- and Calcium-Related Defect Centers in Silicon Fast Neutron Transmutation Reactions in Si - A New Way of Introduction of Mg-Related Centers Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A -NMR Study on the Fermi-Level Dependence EPR/ENDOR Investigation on the Nature of Heat Treatment Centers in Silicon Role of Point Defects in Oxygen Agglomeration in Si DLTS Studies of Thermally Treated Carbon-Rich Silicon A Metastable Selenium-Related Center in Silicon The Excited 5T1 State of the Feio -Center in Silicon Identification of the Iron-Boron Line Spectrum in Silicon Ab-Initio Total Energy Calculation of Iron-Aluminum Pairs in Silicon On the Sensitivity of Optical Reflectivity Spectra to the Bulk Defects in Semiconductors - Example of Crystalline Si Detection of Defects Responsible for Lifetime in p-Type Si Spin Dependent Photoconductivity in Silicon-on-Sapphire Group-V Antisite Defects, VGa , in GaAs Electronic Structure of PIn Antisite in InP On the Microscopic Structures of Three Different Arsenic Antisite-Related Defects in Gallium Arsenide Studied by Optically Detected Electron Nuclear Double Resonance The Electron Irradiation Induced Defect E1,E2 in GaAs: Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model The Assignment of the 78/203meV Double Acceptor in GaAs to BAs Impurity Antisite Centers Interaction of Atomic Hydrogen with Arsenic Antisites and Arsenic Interstitials in Gallium Arsenide Incorporation of Be Into Inx Ga1-x As (0.004 x 0.17) Studied by Photoluminescence and Resonant Raman Spectroscopy of Local Vibrational Modes Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C Theory of Carbon Complexes in Gallium Arsenide and Aluminium Arsenide Incorporation of Silicon in (311)A and (111)A GaAs Grown by Molecular Beam Epitaxy Si Acceptors and their Passivation by Hydrogen in p-Type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs The Lattice Location and Electrical Activity of Ion-Implanted Sn in InP Nitrogen-Hydrogen Complexes in GaP and GaAs Recombination and Optical Excitation Properties of the Ga-O-Ga Center in Gallium Arsenide Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al0.22Ga0.78As Defects in Electron Irradiated GaP and GaInP Positron Lifetime Investigations of Electron Irradiated InP Study of Indium Implanted GaAs: Positron Annihilation and Electrical Measurements Fine Structure of the (Fe2+, h) Bound States in GaP and InP New Evidence for Bound States in the Charge Transfer Spectra of Transition-Metal-Doped III-V Semiconductors FTIR Absorption and Photoluminescence Study of a New Defect System in GaP:Fe:S New Aspects of (Semi-Insulating) GaP:Cu Isotopic Structure and the Jahn-Teller Effect in Fe-Doped III-V Materials Native Vacancies in Semi-Insulating GaAs Observed by Positron Lifetime Spectrocopy under Photoexcitation Positron Annihilation at Ionized Acceptors and Vacancies in Indium Phosphide After Electron Irradiation Properties of Important Deep Level T3 in Semi-Insulating Gallium Arsenide Electron and Hole Traps in AlAs p+-n Junctions Grown by MBE Frenkel Pairs in GaAs and InP Lattice Properties of GaAs Layers Grown by MBE Method at Low Temperature Semiconductor Luminescence and Effects of Excitation Transfer Doping of Wide-Gap II-VI Compounds for Short-Wavelength Visible Light Emitting Devices Metal Vacancies in Li and In Doped ZnSe and CdS The Identification of Intrinsic Vacancy Defects in CdTe Photoluminescence and Optically Detected Magnetic Resonance Investigations on the Indium A-Center in CdTe:In Indium Donor Complexes with Cation Vacancies in CdTe and ZnSe Energy Transfer between Fe2+ Centers in Polymorphic ZnS Electron Nuclear Double Resonance Investigations on the Tellurium Vacancy in CdTe Frenkel Pairs on the Te Sublattice of ZnTe? An ODMR Study Study of Vacancy Defects in II-VI Compouds by Means of Positron Annihilation Optical and Magnetic Properties of Titanium Ions in CdTe and (Cd, Zn)Te Time-Resolved Excitation Spectroscopy of Red-Luminescence in ZnSe:Te Incorporation and Interaction of Hydrogen with Acceptor Impurities in II-VI Semiconductor Compounds Ligand Induced Isotope Shifts of Transition Metal Centers in ZnO Metal Vacancies in Li and In Doped ZnSe and CdS A Positron Annihilation Study of Defects in ZnO and Their Relation to Luminescence Centers Defect Control in Relaxed, Graded GeSi/Si Origin of Mosaic Structure in Relaxed Si1-xGex Layers Point Defects in SiGe Epitaxial Layers and Bulk Crystals Defect Characterization in P Isotype Si/SiGe/Si Heterostructures by Space Charge Spectroscopy Test for the Impurity Wavefunction Modelling from the Alloy Broadening of the Impurity-Related Luminescence Strain Relaxation During Epitaxial Crystallization of GexSi1-x Alloy Layers Produced by Ion-Implantation Rapid Thermal Annealing of Ion Implanted Strained Si1-xGex Diffusion, Interface Mixing and Schottky Barrier Formation Strain Relaxation in Thin ZnTe Epilayers on GaAs and ZnSe/GaAs 1D Properties of Straight Dislocation Segments in Si and Ge Metastable Surface Defects in p-Type GaAs Raman Study of Misfit Dislocations in ZnSe/GaAs Structures Electronic Properties of the (001) Surface of Diamond Covered with Hydrogen Characterization of Semiconductor Surfaces and Interfaces by X-Ray Reflectivity Measurements Spatial Confinement of Misfit Dislocations at the Interfaces of Epitaxial CdSe/GaAs(111) and ZnTe/GaAs(111) Studied by TEM Coulomb Energy of Traps in Semiconductor Space Charge Regions Effect of Interface on Capture and Emission Processes via Deep Centers Heteroepitaxy of GaAs on Porous Silicon: The Structure of the Interface Evidence for an Assisted Defect Mechanism Leading to a Reduced Apparent Band Offset Impurity-Enhanced Disordering in Superlattices Exciton Spectroscopy of Near-Surface GaAs/Al0.3Ga0.7As Quantum Wells - The New Method of Band Bending Investigation Thermally Induced Compositional Disordering of InGaAs/GaAs and GaAsSb/GaAs Single Quantum Wells Alloy Dependence of the Carrier Concentration and Negative Persistant Photoconductivity in Ga1-xAlxSb/InAs/Ga1-xAlxSb Single Quantum Wells Tuning of 2DEG Mobility by Modification in Ordering of Remote Impurity Charges in GaAs/AlGaAs Heterostructures DX Centers in Reduced Dimensionality n-Type AlGaAs Structures Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells Photoluminescence in MOVPE-Grown Pseudomorphic InGaAs/GaAs Quantum Wells on Vicinal GaAs Surfaces Influence of DX Center Structure on Si Modulation -Doping in AlGaAs/GaAs Quantum Wells Si Diffusion out of -Planes in a GaAs Superlattice Luminescence of a Delta Doping Related Exciton in GaAs:Si Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells The Influence of Silicon Diffusion on the Transport Properties of the 2DEG in Si -Doped GaAs Electronic States of n-Type -Doping in GaAs Heterostructures Phonon Spectroscopy of Defects Correlated with the Diffusion of Zn into Si High Spectral Resolution Study of Shallow Donors in GaInAs The Influence of Spin and Composition Fluctuations on Shallow Donor States in Semimagnetic Semiconductors Sc Impurity in CdSe and Cd1-xMnxSe The Theory of Rare-Earth Impurities in Semiconductors The Physics and Application of Si:Er for Light Emitting Diodes PL and EPR Studies of Er-Implanted FZ- and CZ-Si Ionization Energies of Rare Earth Impurities in III-V and II-VI Semiconductor Compounds Efficiency of Rare Earth Intra-4f-Shell Luminescence in InP Pressure-Induced Recovery of the 4f-Shell Luminescence of Yb Doped in InP at Near Room Temperature Energy Levels and Excitation Mechanisms of Yb3+ Ions in InP1-xAsx Alloys Time Decay Study of the Er3+-Related Luminescence in In1-xGaxP Er-4f Luminescence Excitation and Quenching Mechanisms in GaAs Photoluminescence Study of the 779-meV Band in Silver-Doped Silicon Diffusion and Electrical Properties of 3d Transition-Metal Impurity Series in Silicon Lattice Relaxation Accompanying the Photoionization of Deep Transition-Metal Impurity in Semiconductor Photoluminescence from Silver-Related Defects in Silicon Electronic Structure of Copper-Related Defects in Germanium Thermodynamic Properties of Self-Interstitials in Silicon: An Experimental Investigation Shallow Bound Pseudoacceptor States of Iron in Gallium Phosphide An Optical Zeeman Study on Fe3+ in GaAs and InP Unusual Diffusion and Precipitation Behavior of Ni and Cu in Si upon Elevated-Temperature Ion Implantation Electrical and Optical Properties of 3D- and 4D-Transition Metal Related Centers in Silicon Nonlinear Zeeman Splitting and Electron-Phonon Coupling Hydrogen-Gold-Related Deep Levels in Crystalline Silicon In Search of Co-Acceptor Pairs in Highly Doped p-Si: A Moessbauer Spectroscopy Study Studies of 3D Ions in III-V Materials by Thermally-Detected Absorption Spectroscopy-Problem of GaP:Cr Characterization of Defects in Li-Diffused n-Type GaAs Observation and Theory of the H2* Defect in Silicon EPR Identification of Hydrogen Molecules in Bulk Silicon Hydrogen Solubility and Defects in Silicon Diffusion of Charged Hydrogen in Semiconductors Metastable Defects in N-Type GaAs Related to Hydrogen Interpretation of Large Attempt Frequencies in Dissociation of Thermal Donor-Hydrogen Complexes in Silicon Isotope Shift for the Low Energy (63cm-1) Excitation of the Al-H Complex in Si: Evidence for a Hydrogen Wagging Mode Spectroscopic Identification of a Transition Metal-H Complex in Silicon Structural Study of Hydrogen Induced Platelet in Si and Ge by Transmission Electron Microscopy Hydrogen Related Optical Centers in Radiation Damaged Silicon EPR Experiments on Hydrogen-Implanted Silicon Crystals: Annealing Properties of Bond Center Hydrogen Charge and Site-Change Dynamics of Muonium (Hydrogen) in Si Photo-Induced Lattice Relaxation and Dissociation of a Hydrogen-Carbon Complex in Silicon Interaction between X-H Bonds and the Lattice in III-V Compounds Determined from Temperature-Dependent Spectroscopic Studies Depth Distribution of Diffused Hydrogen in n-Type GaAs Deep Levels of Vanadium- and Chromium-Hydrogen Complexes in Silicon Deuterium Effusion from InP Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling Effect of Carbon on Anharmonic Vibration of Oxygen in Crystalline Silicon The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350 DegreesC and 500 DegreesC A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon Hydrostatic Pressure Investigations of Metastable Defect States Vacancy in the EL2 and DX Centers Studied by Positron Annihilation Theoretical Calculations of Antisite and Antisite-Like Defects in GaP Pressure Dependences of Transition Energies of the As Antisite and the Ga-Vacancy-As-Interstitital Pair Compared to Stable and Metastable EL2 Fine Structure Observed in Thermal Emission Process for the EL2 Defect in GaAs Ordering of the EL2 Defects in the Metastable State Coexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions Direct Evidence for Two-Electron Occupation of Ge-DX Centers in GaAs Photoexcited and Metastable States of DX Centers in Si Doped Alx Ga1-x As Deep Centers in Forward Based GaAs/AlGaAs Quantum Wells and Superlattices Ab-Initio Calculation of the Hyperfine Fields for Deep A1 Donors in GaAs under Pressure Magneto-Optical and ODEPR Investigations of Silicon Doped AlxGa1-xAs First Observation of a Metastable Character of Irradiation-Induced Defects in GaAs-GaAlAs Superlattices Symmetry of the Acceptor-Like State of the EL2 Defect in the Metastable Configuration The Ultrasonics-Induced-Quenching of PPC Related to DX Centers in AlxGa1-xAs Influence of Ultrasound Vibrations on the Stable-Metastable Transitions of EL2 Centers in GaAs Electron-Phonon Coupling at Deep-Level Defects and the Metastable Transition of EL2 Pressure Induced *-Shallow - Deep A1 Transition for Group VI:S, Se, and Group IV:Ge Donors in GaAs Properties of Resonant Localized Donor Level in Low-Temperature-Grown InP Kinetics of Electron Capture on DX Centers under High Pressure Static and Dynamic Absorption Measurements of the DX Center in AlxGa1-xAs Vacancy Related Metastable Defects in III-V Semiconductors - A Study of the EL2 and DX Center by Positron Annihilation, Photoconductivity and Infrared Spectroscopy Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al.3Ga.7As by Moessbauer Spectroscopy Hole Capture by the DX Center in AlGaAs Schottky Barriers Energy Shifts Due to the Local Environment of DX Centers in Alx Ga1-x As:Si Evidence for Alloy Splitting of the Te DX State in AlxGa1-xAs Reduction of Spatial Correlations Amongst DX Charges Owing to Capture of Photoexcited Electrons into a Localized Donor State in Al0.35Ga0.65As The DX-Centers Related Mobility in AlGaAs: Charge Correlation and Multilevel-Structure Effects Study of PPC in AlGaAs/GaAs Heterostructures. Discovery of an Excited State of the DX Center at 0.65 eV. On the Electron Capture Kinetics of DX Centers in AlxGa1-xAs:Si Defect Interaction with the Double Donor 77Br in GaAs and InAs Coexistence of the DX0 and DX-State in Heavily Doped GaAs:Si ? The Metastable Si:(S + Cu) Defect The Structure of Au-Li and Pt-Li Complexes in Silicon The Configurational Change of a Metastable S-Cu Defect in Silicon A New Bistable Shallow Thermal Donor in Al-Doped Si Metastable-Defect Behaviors of Iron-Boron Pairs in Silicon Metastability of the Ali-AlSi Pair in Silicon? DX-Like Centers in II-VI Diluted Magnetic Semiconductors Tunneling Study of Metastable Electron States Produced by Reconstructing Impurity Centers in PbTe:In Passivation and Reactivation of (H,P) Pairs in Si The Nitrogen Pair in Crystalline Silicon Studied by Ion Channeling Vacancies and {V,Hn} Complexes in Si: Stable Structures, Relative Stability, and Diffusion Properties The Nature of Trigonal Centers in Iron-Doped p-Type Silicon Annealing of Electron Irradiated P-, As-, Sb- and Bi-Doped Czochralski Silicon Relative Stability of HT vs. H* and HT2 vs. H*2 in c-C, Si, Ge and -Sn and Their Consequences On the Pairing between Indium and Carbon Atoms in Silicon Iron-Phosphorus Interaction in Si Vacancy-Assisted Diffusion of Si in GaAs: Microscopic Theory Polarized Photoluminescence in Highly Si-Doped GaAs Phenomenon of Two-Step Alignment of VGaSnGa Complexes in GaAs under Uniaxial Pressure Photoexcitation of Defects Related to B in GaAs Magnetotunnelling through 1s- and 2p-Like Donor States in the Quantum Well of Resonant-Tunnelling Diodes Theoretical Study on the Electronic States of Dislocations and Dislocation Motion in Semiconductors Ab Initio Cluster Theory of Substitutional Oxygen in Silicon First-Principles Simulations of Vacancies and Antisites in InP Scanning Tunneling Microscopy and Spectroscopy of Arsenic Antisite Defects in GaAs Scanning Tunneling Microscopy of Si Donors in GaAs X-Ray Triple Crystal Diffractometry of Structural Defects in SimGen Superlattices GIXA, a Novel Technique in Near-Surface Analysis Electrically Detected Electron Paramagnetic Resonance Magnetic Resonance Techniques for Excited State Spectroscopy of Defects in Silicon Optically Detected Cyclotron Resonance for Defect Characterization Spin Dependent Recombination: An Improved Theory Applied to Deep Centers in Silicon Contactless Photothermal Ionization Spectroscopy of Shallow Defects in Semiconductors Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon Detection of Nonradiative Transition in P++ Ion Implanted p-Si by a Photoacoustic Spectroscopy DLTS of Recombination Centres in Semiconductors Raman Study of 'Boson Peak' in Ion-Implanted GaAs: Dependence on Ion Dose and Dose Rate A Model for Anharmonic Vibrational Excitation of -Bond-Interstitial Impurities in Si and Ge Crystals Reactions of Gallium Vacancies during Annealing and Zn Diffusion in GaAs: Si Defect Concentration Gradients at Semiconductor Junctions Diffusion of Mn-Atoms during the Growth of CdTe-MnTe Superlattices Particularities of the Zn Diffusion into InGaAsP from Spin-On Polymer Films U-Shaped Diffusion Profiles of Zn Atoms in GaAs by Electron Beam Doping Zinc Diffusion in Gallium Antimonide Evidence of Fast Diffusion of Plasma-Induced Centers in GaAs by Photo-Reflectance Spectroscopy Influence of Spatial Coulomb Potential Fluctuations on the Mobility in AlxGa1-xAs with DX Centers Impurity Self-Screening Defects and Recombination in Disordered Silicon Optically Detected Magnetic Resonance Investigations on Rapidly Thermally Oxidized Porous Silicon The Relative Importance of Radiative and Non Radiative Recombinations in the Luminescence of Porous Silicon Association of Non-Radiative ODMR with the Non-Visible Emitting Regions within Porous-Si Electrical Characterization of Surface Defects on Porous p-Type Silicon Luminescence due to Oxygen Induced Chemical Confinment on a Silicon Surface Defects in As-Prepared and Thermally Oxydized Porous Silicon Carbon as a Probe of Edge-Defined Film-Fed Growth Silicon Luminescence Associated with Rod-Like Defects in Czochralski Silicon Phase Transitions at the Amorphous/Crystalline Interface in Ion-Implanted Silicon and Their Role in End-of-Range Defect Formation Au-Related Deep States in the Presence of Extended Defects in N-Type Silicon Interaction between Supersaturated Transition Metals (Cu, Ni, Fe) and Extended Defects in CZ-Si Control of Size and Density of Stacking Fault in Silicon by Gold Diffusion On the Influence of Transition Metal Impurities on the Oxygen Precipitation in CZ-Grown Silicon Implantation of Carbon in GaAs and Compensating Native Defects The Influence of Process-Induced Surface Defects on Luminescence and Transport Properties of Low-Dimensional Structures Deep Level Defects Detection in Degrading GaAs/AlGaAs Quantum Well Laser Influence of Electron Irradiation Induced Defects on the Current-Voltage Characteristics of a Resonant Tunneling Diode Electronic Properties of Defects Introduced during Electron and Alpha Irradiation of GaAs Influence of Micro-Inhomogeneities on the Electron Mobility in Undoped N-Type LEC GaAs Dislocation-Induced Defect Levels in Silicon Structure Investigations of Heteroepitaxial CoSi2/Si Layers Formed by Ion Implantation Oxygen Clusters in As-Grown Cz-Si Crystals Probed by Positron Annihilation Relation between Dislocation Motion and Formation of Intrinsic Point Defects The Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si (001) Substrates Characterization of EL2 in Annealed LT-GaAs Theory of Dislocations in GaAs Electrical Properties of Organometallic Vapour Phase Epitaxial GaAs Grown on Si Substrates Strain and Relaxation in ZnSe/CdSe Superlattices Strain Induced Islanding of EuTe Epitaxial Films Observed by In-Situ-Rheed and STM Investigations Influence of Oxygen on External Phosphorus Gettering in Disordered Silicon Wafers Binding of Copper to Nanocavities in Silicon Phosphorus Diffusion Gettering of Gold in Silicon The Diffusion of Gold during the Gettering Influence of Phosphorus Effect of Interfacial Hydrogen in CoSi2/Si(100) Schottky-Barrier Contacts EPR Study of Platinum-Hydrogen Complexes in Silicon

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詳細情報

• NII書誌ID(NCID): BA21753791
• ISBN:
  • 0878496718
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Zürich, Switzerland
• ページ数/冊数: 3 v. (1686 p.)
• 大きさ: 25 cm
• 分類:
  • NDC8 : 428.8
• 親書誌ID:
  • BA00294222