Semiconductor materials for optoelectronics and LTMBE materials : proceedings of symposium A on semiconductor materials for optoelectronic devices, OEICs and photonics and symposium B on low temperature molecular beam epitaxial III-V materials : physics and applications of the 1993 E-MRS Spring Conference, Strasbourg, France, May 4-7, 1993

著者

• Hirtz, J. P.

書誌事項

Semiconductor materials for optoelectronics and LTMBE materials : proceedings of symposium A on semiconductor materials for optoelectronic devices, OEICs and photonics and symposium B on low temperature molecular beam epitaxial III-V materials : physics and applications of the 1993 E-MRS Spring Conference, Strasbourg, France, May 4-7, 1993

edited by J.P. Hirtz ... [et al.]

（European Materials Research Society symposia proceedings, v. 40）

North-Holland, 1993

内容説明・目次

内容説明

These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; and polymers for optoelectrics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.

目次

• Part 1 Symposium A on semiconductor materials for optoelectronic devices, OEICs and photonics: epitaxy for optoelectronic applications
• quantum size structures
• optoelectronic devices
• strained and mismatched structures
• interdiffusion and ion implantation
• new devices and integration of devices
• optoelectronics on silicon
• bulk III-V crystals and new optoelectronic materials. Part 2 Symposium B on low temperature molecular beam epitaxial III-V materials - physics and applications: LTMBE GaAs - present status and perspectives, G.L. Witt
• point defects in III-V materials grown by molecular beam epitaxy at low temperature, P. Hautojarvi et al
• GaAs, AlGaAs and InGaAs epilayers containing As clusters - semimetal/semiconductor composites, M.R. Melloch et al
• extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP, A. Claverie and Z. Liliental-Weber
• optoelectronic applications of LTMBE III-V materials at a low temperature by molecular beam epitaxy, U.K. Mishra.

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詳細情報

• NII書誌ID(NCID): BA22325115
• ISBN:
  • 0444817697
• LCCN: 94129213
• 出版国コード: us
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Amsterdam ; New York
• ページ数/冊数: 345, 106 p.
• 大きさ: 29 cm
• 親書誌ID:
  • BA07004036