Hydrogen in compound semiconductors

著者

• Pearton, S. J.

書誌事項

Hydrogen in compound semiconductors

edited by S.J. Pearton

（Materials science forum, v. 148-149）

Trans Tech Publications, c1994

注記

Includes indexes

内容説明・目次

内容説明

State-of-the-art reviews on all the major areas of interest are brought together in this book, namely the role of hydrogen during epitaxial growth, its entry into the material during processing, its subsequent diffusivity and bonding with dopants, other impurities or defects, its effect on device performance and reliability and positive uses for hydrogen in passivating surfaces.

目次

Hydrogen in Compound Semiconductors-Introduction The Role of Hydrogen in UHV Growth of III-V Semiconductors The Role of Hydrogen in the Growth of III-V Compound Semiconductors by OMVPE Role of Hydrogen in Semiconductor, Dielectric and Metal Deposition onto InP by Means of Rapid Thermal Low Pressure Metalorganic Chemical Vapor Deposition Hydrogenation of III-V Semiconductors during Processing Sources of Hydrogen in III-V Device Processing Plasma Passivation of III-V Semiconductor Surfaces Hydrogen Implantation in III-V Compound Semiconductors and its Redistribution with Annealing Hydrogen Diffusion in Compound Semiconductors Vibrational Spectroscopy of Dopant-Hydrogen Complexes in III-V Semiconductors Hydrogen in Crystalline Gallium Phosphide Hydrogen in Ternary and Quaternary Materials Shallow Levels Passivation in Implanted and Plasma Hydrogenated Compound Semiconductors Theoretical and SR Studies Related to Hydrogen in Compound Semiconductors Hydrogen in III-V Compound Semiconductors Spectroscopy of Hydrogen-Related Defects in III-V Semiconductors by Nuclear Techniques Hydrogen in III-V Device Structures

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詳細情報

• NII書誌ID(NCID): BA22330465
• ISBN:
  • 0878496726
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Zürich, Switzerland
• ページ数/冊数: vi, 535 p.
• 大きさ: 25 cm
• 親書誌ID:
  • BA00294222