Advanced semiconductor device physics and modeling
著者
書誌事項
Advanced semiconductor device physics and modeling
（The Artech House materials science library）
Artech House, c1994
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
This reference provides detailed information which enables you to quickly understand the physics and modeling of mainstream devices. Packed with nearly 1,000 equations and 396 illustrations.
目次
- Semiconductor device fundamentals - energy band theory, statistics of free carriers in semiconductors, generation and recombination processes, Boltzmann transport equation, drift and diffusion mechanisms, carrier scattering mechanisms, basic semiconductor device equations, Monte Carlo simulation
- physics and models related to p/n junctions - description of p/n junctions, ambipolar transport equation, Linvill lumped circuit model, Sah transmission line circuit model, current and avalanche breakdown in reverse-biased junctions, tunnelling currents in p/n junctions, charge storage in p/n junctions, abrupt heterojunction diodes, abrupt heterojunctions with a setback layer, graded heterojunctions, references, problems
- bipolar junction transistors - steady-state characteristics under forward-active operation, current-voltage characteristics including saturation and current-induced base pushout, effect of quasineutral base width modulation, effect of nonuniform doping concentration, avalanche multiplication in bipolar transistor, multidimensional effects, poly-emitter bipolar transistors, switching speed of BJTs, large- and small-signal models, references, problems
- junction field-effect transistors - general theory, current-voltage characteristics of three-terminal JFETs, current-voltage characteristics of four-terminal JFETs, short-channel JFETs, large-and small-signal models, references, problems
- metal-oxide-semiconductor field-effect devices - metal-oxide-semiconductor (MOS) diodes, metal-oxide semiconductor field-effect transistors (MOSFET), numerical and experimental results, hot-carrier effects, capacitance of intrinsic MOSFET, MOSFET equivalent circuit, references, problems
- metal-semiconductor junction devices - Schottky diodes, ohmic contacts, metal-semiconductor field-effect transistors (MESFET), references, problems
- heterojunction bipolar and field-effect transistors - single heterojunction bipolar transistors, abrupt HBTs with a setback layer, HBTs with a graded uunction, double heterojunction bipolar transistors, heterojunction field-effect transistors, references, problems
- solar cells - basic concept, homojunction solar cells, heterojunction in solar cells, effect of V-groove surface on solar cell performance, references, problems
- photoconductive diodes - device structure and concept, general theories, conductivity and current, effect of contact regions, two-dimensional analysis, transient behaviour of photoconductive diodes, references, problems.
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