Polycrystalline semiconductors III : physics and technology : proceedings of the Third International Conference, Saint Malo, France, September 5-10, 1993

著者

• Strunk, H. P. (Horst Paul)
• International Conference on Polycrystalline Semiconductors

書誌事項

Polycrystalline semiconductors III : physics and technology : proceedings of the Third International Conference, Saint Malo, France, September 5-10, 1993

edited by H.P. Strunk ... [et al.]

（Diffusion and defect data : solid state data, pt. B . Solid state phenomena ; v. 37-38）

Scitec Publications, c1994

注記

Includes bibliographical references and indexes

内容説明・目次

内容説明

This book covers the physics and technology of polycrystalline semiconductors by presenting the work of scientists who are concerned with a variety of polycrystalline materials in research, technology, and application, with a view to bridge the gap between fundamental and technological aspects of polycrystalline semiconductors.

目次

The Electrical Activity of Dislocations in Edge-Defined Film-Fed Growth Silicon Correlation of Structural and Electronic Properties from Dislocations in Semiconductors How Can Dislocations Enhance the Efficiency of Photovoltaic Solar Cells? About the Electrical Conductivity of Dislocations in Multicrystalline Silicon Solar Cells g-Tensors of Electrons Bound to 60 Degrees-Dislocations in Ge and Si Formation of Misfit Dislocation Networks in Ge/Si as Dependent on the Substrate Orientation In Situ Observations of Dislocation Motion in Polycrystalline Silicon during Straining Experiment in a High-Voltage Electron Microscope Theoretical Study of the Atomic and Electronic Structures of Grain Boundaries in Semiconductors Structure of Grain Boundaries in Polycrystalline Semiconductors High Temperature Atomic Simulations of Grain Boundaries in Semiconductors Using a New Type of Periodic Boundary Conditions Calculation of the Free Energy of Different Configurations of {001} =13 Grain Boundary in Silicon by the Quasiharmonic Method Improved Quasiharmonic Methods for Grain Boundary Free Energy Calculations in Silicon Calculation of Grain Boundary Free Energy by Molecular Dynamics and Tests on Silicon Perfect Crystal Moebius Tight Binding Calculations for Grain Boundaries Structural and Electrical Transport Properties of Grain Boundaries in High Temperature Superconductors The Microstructure of Sm2-xCexCuO4- Interaction of Grain Boundaries, Dislocations and Impurity Atoms in Semiconductors Oxygen and Copper Precipitation in the Vicinity of the Silicon-Silicon-Dioxide Interface: Microstructure and Electrical Properties Non-Ideal I-V-Characteristics of Block-Cast Silicon Solar Cells Copper and Nickel Precipitation in a =25 Silicon Bicrystal Desorption Energy of Oxygen Adsorbed on Un-Intentionally Doped Low Pressure Chemical Vapor Deposited Silicon Films Segregation and Precipitation of Platinum Silicides in Si/SiO2 Interfaces and Dislocations Calculation of the Atomic and Electronic Structure of the {113} Planar Interstitial Defects in Silicon Local Grain Boundary Property Measurements Local Investigation of the Electrical Properties of Grain Boundaries in Silicon Investigation of Minority Carrier Diffusion Length in Multicrystalline Silicon by Quantitative Electron Beam Induced Current Mapping Minority Charge Carrier Trapping at Grain Boundaries Provided with a High Barrier Schottky Contact Electrical Transport in Polycrystalline Semiconductors Origin of Curved Arrhenius Plots for the Conductivity of Polycrystalline Semiconductors Effect of Local Inhomogeneities on the Electrical Properties of Polycrystalline Silicon On Some Photoelectrical Interface Processes in Mixed Semiconductor Heterostructures with Photosynthetic Pigment Polycrystalline Silicon-Silicon Carbide Emitters for Heterojunction Transistors Investigation of the Defect Distribution in Polycrystalline Silicon Properties of Thermoluminescence and Thermally Stimulated Conductivity in Polycrystalline Materials: Numerical Studies Microscopic Processes in Crystallisation Laser Beam Application in Semiconductor Technology In-Situ Excimer Laser Induced Crystallization of Hydrogenated Amorphous Silicon Thin Films Microstructure of Poly-Si Obtained by Rapid Thermal Annealing of Amorphous Silicon Films Crystallisation Behaviour of Amorphous Thin Si Films Produced by Low Pressure Chemical Vapor Deposition Beam Shape Effects with Excimer Laser Crystallisation of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Amorphous Silicon Crystalline and Electrical Properties of Polysilicon Obtained by Annealing of Si Films Produced by Low Pressure Chemical Vapor Deposition from Si2H6 Determination of Crystallisation Parameters of a-Si from In Situ Conductance Measurements and Transmission Electron Microscopy Analysis Grain Boundary Character Distribution in Rapidly Solidified and Annealed Silicon Ribbons Decomposition and Microstructure during Crystallization of Amorphous GexSi1-x Films A Comparison of Polysilicon Produced by Excimer (ArF) Laser Crystallisation and Low-Temperature (600 DegreesC) Furnace Crystallisation of Hydrogenated Amorphous Silicon (a-Si:H) Microstructure and Transistor Properties of Solid-State-Crystallised Polysilicon: Effect of a Prolonged 600 DegreesC Anneal The Art of Living with Defects in Silicon: Gettering and Passivation Hydrogen and Deuterium in Semi-Crystalline Silicon Wafers and Solar Cells External Gettering around Extended Defects in Multicrystalline Silicon Wafers Evidence for Defect Metastability in Hydrogen Passivated Fine Grain Polycrystalline Silicon Deuterium Effusion from Microcrystalline Sputtered Silicon Thin Films: Hydrogen Stability and Bonding Configurations Defect Structure of Multicrystalline Chemical Vapor Deposited Silicon Films Optical and Photoelectrical Properties of Microcrystalline Silicon Layers in Relation to Structural Ordering Photo-Induced and Thermally Stimulated Degredation in a-Si:H : Mechanism of Defect Creation Electrical Properties and Microstructure of Metal Oxides Varistors General and Characteristic Features of the Structure of Polycrystalline and Non-Crystalline Silicon Properties of Anodically Oxidized Polycrystalline Silicon Layers Properties of Multicrystalline Silicon Heat Treated by Classical and Rapid Thermal Processing A Contribution to the Characterization of Multicrystalline Solar Silicon Silicon Layers Grown by Liquid Phase Epitaxy on Polycrystalline Silicon Substrates Structural, Electrical and Optical Properties of Reactive Magnetron Sputtered Poycrystalline ZnO: Al Films as a Function of the Oxygen Partial Pressure during Deposition Photovoltaic Solar Cells: State of the Art, National Strategies and Perspectives Polycrystalline Silicon Films, New Candidates for Photovoltaics? Polycrystalline Silicon Thin Films on Glass for Photovoltaic Cell Applications Charge Build-Up in Solar Cells Treedimensional Modelling of a Back Junction Solar Cell Made with Improved Polycrystalline Silicon Wafers MoS2, MoSe2, WS2 and WSe2 Thin Films for Photovoltaics Textured Thin Films of Transition Metal Dichalcogenides for Potential Application in Photoelectrochemical Solar Cells Electrooptical and Structural Properties of Polycrystalline CdTe Thin Films for Solar Cells Growth Mechanism and Properties of Chemically Deposited Cadmium Sulfide Thin Films Characterization of CuInSe2 Absorber Thin Films Grown by Metal Organic Chemical Vapor Deposition Physical Vapor Deposition of CuInX2 (X = S, Se) Thin Films: A Model for the Growth Mechanism Effect of Annealing in a Selenium Atmosphere on the Properties of Flash Evaporated CuInSe2 Polycrystalline Thin Films Effect of Heat Treatment on Electrical Properties of Polycrystalline CuInSe2 Thin Films Prepared by Two Methods Physical Properties of Electrodeposited Copper Indium Diselenide Thin Films and Junction Realization Polysilicon Technologies for Large Area Displays Thermal Stability of Glass Substrates During Solid Phase Crystallisation of a-Si on Glass by Rapid Thermal Annealing Polycrystalline Silicon Thin Film Transistors for Liquid Crystal Displays Performance of Poly-Si Thin Film Transistors Fabricated by Excimer-Laser Annealing of SiH4- and Si2H6- Source Low Pressure Vapor Deposited a-Si Films with or without Solid-Phase Crystallization Modelling and Optimisation of Poly-Si Thin Film Transistors for Flat Panel Displays Bulk and Interface States in Polycrystalline Silicon Thin Film Transistors Hot Carrier Induced Degradation in Polycrystalline Silicon Thin Film Transistors Influence of the Polysilicon Film Structure on the Capacitance Voltage Characteristics of Thin Film Transistors Photoconductivity Peculiarities in CdSe Field Transistor Layer

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詳細情報

• NII書誌ID(NCID): BA22938464
• ISBN:
  • 3908450047
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Zug, Switzerland
• ページ数/冊数: xvi, 611 p.
• 大きさ: 25 cm
• 親書誌ID:
  • BA07841800