Semiconductor ceramics : grain boundary effects
Author(s)
Bibliographic Information
Semiconductor ceramics : grain boundary effects
（Ellis Horwood series in physics and its applications）
Ellis Horwood , PWN-Polish Scientific Publishers, 1994
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Note
Includes bibliographical references and index
Description and Table of Contents
Description
Presenting a review of current research on ceramic materials with active grain boundaries, this book describes a specific group of ceramic materials. These are characterized by the precisely formed energetic structure of their grain boundaries. Consisting of PTCR (positive temperature coefficient of resistivity) thermistors made most frequently of barium or strontium titanates (or both), GBBL (grain boundary barrier layer) capacitors, ZnO Metal Oxide Varistors (MOV), and CSSD (chemically sensitive conductor devices, with SnO2, ZnO and TiO2 as representative), the authors discuss the properties and mechanisms of action and instability, or ceramic materials. Attention is paid to the complex formulation of each subject, starting with a technical description, through to a presentation of electrical and microstructural investigations, and ending with an explanation of the mechanisms of actions, electrical conductivity and stability. References with suggestions for further reading are included, and the book also contains an introductory chapter which describes fundamental ceramic technology.
Table of Contents
- Formation of selected properties of the grain boundaries
- metal oxide varistors
- PTCR thermistors
- GBBL capacitors
- ceramic gas sensors.
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