Dx centers-donors in AlGaAs and related compounds
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Bibliographic Information
Dx centers-donors in AlGaAs and related compounds
（Diffusion and defect data : solid state data, pt. A . Defect and diffusion forum ; v. 108）
Scitec Publications, c1994
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Includes bibliographical references and indexes
Description and Table of Contents
Description
During the last 25 years, the behavior of donors in III-V alloys has been the subject of a very extensive research effort. The research emphasis on AlGaAs compounds is motivated by the industrial importance of AlGaAs/GaAs heterojunction based devices. As seeing it now, "the DX center problem", the behavior of donors in III-V alloys, has shown to be unexpectedly difficult to understand. To determine the microscopic nature of the DX center is still a challenging problem.
Table of Contents
Introduction
Theoretical Models for DX Deep Donor States Based on Ab Initio Total Energy Calculations
DX Microstructure and Nature in AlXGa1-XAs: Contributions from Structure Sensitive Experiments
Impact of the DX Centers on the Electrical Properties of AlGaAs
Deep Level Transient Spectroscopy of DX Centers
Photoluminescence Properties of (Al,Ga)As Alloys and GaAs under Pressure in the Framework of DX Center Studies
DX Centers in Other III-V Alloys
Minimizing DX Center Effects in AlGaAs Based Devices
The DX Centers: A Comparison of Theoretical Predictions and Experimental Results
by "Nielsen BookData"