Porous silicon

Author(s)

• Feng, Zhe Chuan
• Tsu, Raphael

Bibliographic Information

Porous silicon

editors, Zhe Chuan Feng, Raphael Tsu

World Scientific, c1994

Note

Includes bibliographical references

Description and Table of Contents

Description

Due to the recent discovery of the room-temperature visible light emission from porous silicon (P-Si), a great interest in P-Si and related materials has arisen in the last decade of the 20th century. Crystalline (c-) Si, at the heart of integrated circuits, has an indirect band gap of 1.1 eV, which limits its application in optoelectronics. The visible light emitting P-Si may open a new field combining Si integrated technology and optoelectronics. This book is a comprehensive review of the recent research and development of porous silicon. Strong visible photoluminescence (PL) and electroluminescence (EL) from P-Si and other forms of silicon nanocrystallites (nc-Si) are reviewed. Several proposed mechanisms for the PL from porous silicon such as quantum confinement, amorphicity and molecular PL are studied. The following issues are covered: mechanisms for the visible light emission, physical structures, studies of the PL and EL, correlation of structure and optical studies, surface physics and chemistry, relationships among various forms (P-Si, a-Si, µc-Si), device applications, future developments.

Table of Contents

• Porous Silicon Quantum Sponge Structures: Formation Mechanism, Preparation Methods and Some Properties (U Gosele & V Lehmann)
• Light Emission from Silicon (S Iyer & Y H Xie)
• Spin Resonance Investigations of Porous Silicon, Siloxene and Related Materials (M Stutzmann & M S Brandt)
• Porous Silicon: Microstructure, Optical Properties and Application to Light Emitting Diodes (T Matsumoto et al)
• Photoluminescence Excitation Spectroscopy of Porous Silicon (N M Haegel & L Wang)
• Porous Silicon: Surface Chemistry (C Tsai et al.)
• First Principles Calculations of Light Emission from Si-Based Materials (C G Van de Walle & J E Northrup)
• The Photo Excitation and Luminescence in Porous Silicon (G G Qin)
• Properties of Light-Emitting Porous Si and Sil-xGe Alloys Produced by Stain Etches (R W Fathauer et al). (Part contents).

by "Nielsen BookData"

Details

• NCID: BA23719193
• ISBN:
  • 9810216343
• LCCN: 95134818
• Country Code: si
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Singapore
• Pages/Volumes: xx, 465 p.
• Size: 23 cm
• Classification:
  • LCC : TK7871.85
  • DC20 : 537.6/226
• Subject Headings:
  • LCSH : Semiconductors -- Materials -- Optical properties
  • LCSH : Silicon -- Optical properties
  • LCSH : Porous silicon -- Optical properties