Control of semiconductor interfaces : proceedings of the First International Symposium on Control of Semiconductor Interfaces, Karuizawa, Japan, 8-12 November 1993
著者
書誌事項
Control of semiconductor interfaces : proceedings of the First International Symposium on Control of Semiconductor Interfaces, Karuizawa, Japan, 8-12 November 1993
Elsevier, c1994
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注記
Includes bibliographical references and indexes
内容説明・目次
内容説明
These proceedings contain a selection of papers presented at a symposium on semiconductor interfaces. Topics covered include metal/silicon, semiconductor hetero-interface, characterization, semiconducting new materials, control of interface properties and contact metallization.
目次
- Plenary
- metal/silicon
- semiconductor hetero-interface
- characterization (I)
- semiconducting new materials
- metal/compound semiconductor
- SiO2/Si
- characterization (II)
- insulator/semiconductor
- characterization (III)
- interface in device
- control of interface formation - Si
- control of interface properties - Si
- contact metallization - Si
- characterization - Si
- control of interface formation - compound semiconductors
- control of interface properties - compound semiconductors
- contact metallization - compound semiconductors
- characterization - compound semiconductors. (Part contents).
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