Semiconductor devices

著者

• Sparkes, John J.

書誌事項

Semiconductor devices

J.J. Sparkes

（Tutorial guides in electronic engineering, v. 12）

Chapman & Hall, 1994

2nd ed

注記

Previous ed.: 1987

内容説明・目次

内容説明

This book presents semiconductor devices in a clear and concise manlier, dealing with the material encountered in the first and second years of an undergraduate or Higher National Diploma programme in electronics, electrical engineering or physics. It provides an ideal introduction firstly to the fundamental theoretical principles underlying the operation of semiconductor devices and, secondly, to their simple and effective mathematical modelling. There are also extensive references to circuit simulation software. In this enlarged second edition, the opportunity has been taken to show how the concept of electron energy bands can be used to introduce the physical processes in semiconductor devices. Explanations are given of a wider range of device characteristics in circuit applications and how these characteristics can be modelled by equivalent circuits. As well as a full update of the original text, the new edition contains: new material on the band model of an junction; new material on the band gap diode; and expanded treatment of JFETs to complement the existing material on MOSFETs.

目次

• Part 1 Semiconductors and applications of semiconductor devices: semiconductor materials - pure semiconductors, doped semiconductors, recombination
• typical applications of semiconductor devices - semiconductor diodes, field effect transistors (FETS), bipolar junction transistors (BJTS), thyristors. Part 2 PN junction diodes: the silicon pnjunction
• current flow in semiconductors
• the pn junction in equilibrium
• current through a pn junction
• transition region width and capacitance
• breakdown diodes
• recombination and generation in pn junctions
• solar cells and photodiodes
• charge storage and diffusion capacitance
• small signal equivalent circuit of a diode
• SPICE. Part 3 Field effect transistors: the junction field effect transistor (JFET)
• metal-oxide-silicon field effect transistors (MOSFETS)
• characteristic equation of a MOSFET
• the formation of the channel and the threshold voltage
• the small signal equivalent circuit. Part 4 Bipolar junction transistors: the principles of the operation of the bipolar transistor
• the hybrid - small-signal equivalent circuit
• practical design considerations
• the dependence of fr, and B on the d.c. collector current
• the bipolar transistor as a switch
• thyristors. Part 5 Integrated circuits: introduction
• silicon integrated circuits based on bipolar npn transistors
• the processing steps
• pnp transistors
• diodes
• resistors
• capacitors
• Schottky diodes
• MOSFETs in silicon integrated circuits
• charge-coupled devices. Part 6 New technologies: introduction
• III-V compounds
• the gallium arsenide MESFET
• ternary and quaternary compound semiconductors
• light-emitting diodes
• heterojunction LEDs
• semiconductor lasers
• heterojunction bipolar transistors.

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詳細情報

• NII書誌ID(NCID): BA23972752
• ISBN:
  • 041258770X
• LCCN: 94070269
• 出版国コード: uk
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: London ; Tokyo
• ページ数/冊数: ix, 224 p.
• 大きさ: 25 cm
• 分類:
  • DC20 : 621.38152
• 親書誌ID:
  • BA19163106