Complete guide to semiconductor devices

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Bibliographic Information

Complete guide to semiconductor devices

Kwok K. Ng

(McGraw-Hill series in electrical and computer engineering, Electronics and VLSI circuits)

McGraw-Hill, c1995

Available at  / 12 libraries

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Note

Includes index

Description and Table of Contents

Description

This text provides an overview of existing semiconductor devices. Each device is covered in one short, self-contained chapter for quick review, minimizing the need to cross-refer, and allowing students to compare relative merits of classes of electronic components, such as economic trade-offs.

Table of Contents

  • Part 1 Diodes I - rectifiers: p-n junction diode
  • p-i-n diode
  • Schottky-barrier diode
  • planar-doped-barrier diode
  • isotype-heterojunction barrier. Part 2 Diodes II - negative resistance: tunnel diode
  • transferred-electron device (TED)
  • impact-ionization avalanche transit-time (IMPATT)
  • barrier-injection transit-time (BARITT) diode
  • resonant-tunnelling diode
  • real-space-transfer (RST) diode. Part 3 Resistive devices: resistor
  • Ohmie contact. Part 4 Capacitive devices: metal-oxide-semiconductor (MOS) capacitor
  • charge-coupled device (CCD). Part 5 Switches: metal-insulator-semiconductor switch (MISS)
  • planar-doped barrier switch
  • amorphous threshold switch. Part 6 Transistor I - field-effect: metal-oxide-semiconductor field-effect transistor (MOSFET). Part 7 Transistors II - potential-effect. Part 8 Transistors III - hot-electron. Part 9 Light sources. Part 10 Photodetectors. Appendices: selected non-semiconductor devices
  • physical phenomena. (Part contents).

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