GeSi strained layers and their applications
著者
書誌事項
GeSi strained layers and their applications
Institute of Physics Pub., 1995
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注記
Includes bibliographical references
内容説明・目次
内容説明
^IGeSi Strained Layers and Their Applications provides a ready reference of seminal research papers in this technology for the practising researcher in electronic engineering and materials science.
Silicon technology has dominated the field of microelectronics for the last twenty years. It is the major technology underlying commerical device applications. GeSi strained-layer heterostructure device technology has expanded the range of applications and reinforced the position of silicon as a leading edge material in the microelectronic arena.
This book presents key papers on the following topics:
* growth, nucleation, mechanical structure and stability
* band structure, mobility, and optical properties
* applications
for GeSi strained-layer heterostructure device technology.
The Editors describe the research foundations and introduce selected papers from the leading journals. The material presented represents the best of the experimental and theoretical research results reported over the last twenty years. It is enhanced by an up to date bibliography listing sources for further papers, for researchers who wish to investigate a particular topic in greater depth.
It will form a key reference for two communities, communities who are not always able to keep up to date with research developments in the other's field.
Marshall Stoneham is AEA Chief Scientist and has published over 300 papers and several books, including several in this area. An elected Fellow of the Royal Society and the first Massey Professor of Physics and Director of the Materials Research Centre at University College, London, he has a deep and abiding interest in the ways in which scientific information is disseminated to the wider scientific community.
Suresh Jain is currently based at both Oxford University and AEA Harwell. he was previously Director of the Solid State laboratory for the Indian Government's Ministry of Defence. He is Consultant Editor in Device Physics for Institute of Physics Publishing and retains an active interest in research, indeed with over 200 important publications of his own in this subject area.
目次
Preface. Introduction. Growth, nucleation, mechanical structure and stability. Band structure, mobility and optical properties. Applications. Extensive bibliography of the papers publishe on GeSi alloys, strained layers, quantum wells and superlattices from 1949 to 1991.
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