Compound semiconductors 1994 : proceedings of the Twenty-First International Symposium on Compound Semiconductors held in San Diego, California, 18-22 September 1994
著者
書誌事項
Compound semiconductors 1994 : proceedings of the Twenty-First International Symposium on Compound Semiconductors held in San Diego, California, 18-22 September 1994
（Institute of Physics conference series, no. 141）
Institute of Physics Publishing, c1995
- タイトル別名
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Compound semiconductors 1994 : successor to Gallium Arsenide and Related Compounds
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注記
"Previous symposia have been published as Gallium Arsenide and Related Compounds in the Institute of Physics Conference Series"
Includes bibliographical references and index
内容説明・目次
内容説明
Compound Semiconductors 1994 provides a comprehensive overview of research and applications of gallium arsenide, indium phosphide, silicon carbide, and other compound semiconducting materials. Contributed by leading experts, the book discusses growth, characterization, processing techniques, device applications, high-power, high-temperature semiconductor devices, visible emitters and optoelectronic integrated circuits (OEICs), heterojunction transistors, nanoelectronics, and nanophotonics, and simulation and modeling. The book is an essential reference for researchers working on the fabrication of semiconductors, characterization of materials, and their applications for devices, such as lasers, photodiodes, sensors, and transistors, particularly in the high-speed telecommunications industries.
目次
- International symposium on compound semiconductors award and Heinrich Welker gold medal. Young scientist award. Preface. Chapter 1: Plenary papers (2 papers) including Progress towards high temperature, high power SiC devices (P G Neudeck)
- Ballistic electron transport and superconductivity in mesoscopic Nb-(InAs/AlSb) quantum well heterostructures (H Kroemer, et al). Chapter 2: Epitaxy (36 papers) including Real time monitoring of III-V alloy composition and real time control of quantum well thickness in MBE by multi-wavelength ellipsometry (C-H Kuo, et al)
- Strained InAs/(AlGaIn)As/InP wells for 1.5-2.5 ^D*mm laser applications grown by virtual surfactant MBE (K H Ploog and E Tourni^D'e)
- Growth parameters for metastable GaP^OI-x N^Ox alloys in MOVPE (S Miyoshi, et al)
- Selective regrowth of highly resistive InP current blocking layers by a low pressure metalorganic vapor phase epitaxy (D K Oh, et al)
- Advances in correlating the unusual optical properties of Ga^O0.52In^O0.48P to the microstructure (M C DeLong, et al). Chapter 3: Characterization (29 papers) including High quality etched/regrown GaAs/GaAs interfaces formed by an all in-situ Cl^O2 etching process (D S L Mui, et al)
- Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy (A Matsumura, et al). Chapter 4: High-power, high-temperature semiconductor devices (17 papers) including Advances in silicon carbide device processing and substrate fabrication for high power microwave and high temperature electronics (C D Brandt, et al)
- GaN/AIGaN field effect transistors for high temperature applications (M S Shur, et al)
- Electrical characterization of the thermally oxidized SiO^O2/SiC interface (J N Shenoy, et al). Chapter 5: Visible emitters and OEICs (27 papers) including Physics and simulation of InGaAsP/InP lasers (R F Kazarinov)
- Highly efficient light-emitting diodes with microcavities (E F Schubert and N E J Hunt)
- Dark defects in II-VI blue-green laser diodes (G C Hua, et al)
- Monolithically integrated optical receivers and transmitters (D T Nichols, et al)
- InGaAs/AIGaAs quantum well infrared photodetectors with 3-5^D*mm response (L C Lenchyshyn, et al). Chapter 6: Heterojunction transistors (24 papers) including Energy transport modeling of HBTs considering composition-, doping- and energy-dependence of transport parameters (A Nakatani and K Horio)
- Measurement of the electron ionization coefficient at low electric fields in heterojunction bipolar transistors (C Canali, et al)
- Development of refractory NiGe-based ohmic contacts to n-type GaAs (T Oku, et al). Chapter 7: Simulation and modelling (14 papers) including Resonant tunneling devices: effect of scattering (S Datta, et al)
- Quantum cellular automata: computing with quantum dot molecules (P D Tougaw and C S Lent). Chapter 8: Nanoelectronics and nanophotonics (12 papers). Chapter 9: An international perspective on nanoelectronics and nanophotonics (2 papers). Keyword index. Author index.
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