Compound semiconductors 1994 : proceedings of the Twenty-First International Symposium on Compound Semiconductors held in San Diego, California, 18-22 September 1994
著者
書誌事項
Compound semiconductors 1994 : proceedings of the Twenty-First International Symposium on Compound Semiconductors held in San Diego, California, 18-22 September 1994
(Institute of Physics conference series, no. 141)
Institute of Physics Publishing, c1995
- タイトル別名
-
Compound semiconductors 1994 : successor to Gallium Arsenide and Related Compounds
大学図書館所蔵 全23件
  青森
  岩手
  宮城
  秋田
  山形
  福島
  茨城
  栃木
  群馬
  埼玉
  千葉
  東京
  神奈川
  新潟
  富山
  石川
  福井
  山梨
  長野
  岐阜
  静岡
  愛知
  三重
  滋賀
  京都
  大阪
  兵庫
  奈良
  和歌山
  鳥取
  島根
  岡山
  広島
  山口
  徳島
  香川
  愛媛
  高知
  福岡
  佐賀
  長崎
  熊本
  大分
  宮崎
  鹿児島
  沖縄
  韓国
  中国
  タイ
  イギリス
  ドイツ
  スイス
  フランス
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注記
"Previous symposia have been published as Gallium Arsenide and Related Compounds in the Institute of Physics Conference Series"
Includes bibliographical references and index
内容説明・目次
内容説明
Compound Semiconductors 1994 provides a comprehensive overview of research and applications of gallium arsenide, indium phosphide, silicon carbide, and other compound semiconducting materials. Contributed by leading experts, the book discusses growth, characterization, processing techniques, device applications, high-power, high-temperature semiconductor devices, visible emitters and optoelectronic integrated circuits (OEICs), heterojunction transistors, nanoelectronics, and nanophotonics, and simulation and modeling. The book is an essential reference for researchers working on the fabrication of semiconductors, characterization of materials, and their applications for devices, such as lasers, photodiodes, sensors, and transistors, particularly in the high-speed telecommunications industries.
目次
- International symposium on compound semiconductors award and Heinrich Welker gold medal. Young scientist award. Preface. Chapter 1: Plenary papers (2 papers) including Progress towards high temperature, high power SiC devices (P G Neudeck)
- Ballistic electron transport and superconductivity in mesoscopic Nb-(InAs/AlSb) quantum well heterostructures (H Kroemer, et al). Chapter 2: Epitaxy (36 papers) including Real time monitoring of III-V alloy composition and real time control of quantum well thickness in MBE by multi-wavelength ellipsometry (C-H Kuo, et al)
- Strained InAs/(AlGaIn)As/InP wells for 1.5-2.5 ^D*mm laser applications grown by virtual surfactant MBE (K H Ploog and E Tourni^D'e)
- Growth parameters for metastable GaP^OI-x N^Ox alloys in MOVPE (S Miyoshi, et al)
- Selective regrowth of highly resistive InP current blocking layers by a low pressure metalorganic vapor phase epitaxy (D K Oh, et al)
- Advances in correlating the unusual optical properties of Ga^O0.52In^O0.48P to the microstructure (M C DeLong, et al). Chapter 3: Characterization (29 papers) including High quality etched/regrown GaAs/GaAs interfaces formed by an all in-situ Cl^O2 etching process (D S L Mui, et al)
- Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy (A Matsumura, et al). Chapter 4: High-power, high-temperature semiconductor devices (17 papers) including Advances in silicon carbide device processing and substrate fabrication for high power microwave and high temperature electronics (C D Brandt, et al)
- GaN/AIGaN field effect transistors for high temperature applications (M S Shur, et al)
- Electrical characterization of the thermally oxidized SiO^O2/SiC interface (J N Shenoy, et al). Chapter 5: Visible emitters and OEICs (27 papers) including Physics and simulation of InGaAsP/InP lasers (R F Kazarinov)
- Highly efficient light-emitting diodes with microcavities (E F Schubert and N E J Hunt)
- Dark defects in II-VI blue-green laser diodes (G C Hua, et al)
- Monolithically integrated optical receivers and transmitters (D T Nichols, et al)
- InGaAs/AIGaAs quantum well infrared photodetectors with 3-5^D*mm response (L C Lenchyshyn, et al). Chapter 6: Heterojunction transistors (24 papers) including Energy transport modeling of HBTs considering composition-, doping- and energy-dependence of transport parameters (A Nakatani and K Horio)
- Measurement of the electron ionization coefficient at low electric fields in heterojunction bipolar transistors (C Canali, et al)
- Development of refractory NiGe-based ohmic contacts to n-type GaAs (T Oku, et al). Chapter 7: Simulation and modelling (14 papers) including Resonant tunneling devices: effect of scattering (S Datta, et al)
- Quantum cellular automata: computing with quantum dot molecules (P D Tougaw and C S Lent). Chapter 8: Nanoelectronics and nanophotonics (12 papers). Chapter 9: An international perspective on nanoelectronics and nanophotonics (2 papers). Keyword index. Author index.
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