Wide band gap electronic materials
著者
書誌事項
Wide band gap electronic materials
（NATO ASI series, Partnership subseries 3,
Kluwer Academic Publishers, c1995
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注記
Proceedings of a NATO Advanced Research Workshop on Wide Band Gap Electronic Materials : Diamond, Aluminum Nitride and Boron Nitride, held May 4-6, 1994 at Minsk, Belarus
Includes indexes
内容説明・目次
内容説明
Minsk, Belarus was the site of the NATO ARW on Wide Band-Gap electronic Materials May 3 through 6,1994; 143 participants and observers from 15 countries met for the NATO Advanced Research Workshop on Wide Band-Gap Electronic Materials (NATO ARW). The meeting was marked by a remarkable free exchange between east and west on these topics by revealing technical achievements not widely known or available in the west because ofpast political climate or present economic realities in the Newly IndependentStates. The topics ranged from electron doping of diamond, n-type diamond, negative electron affinity ofdiamond, applications of aluminum nitride, doping ofboron nitride, wideband gap electronic applications, to nanophase diamond. Of the many high-lights during the scientific meetings, an energy sub band due to defects in the diamond lattice was described. These defects areresponsible for the light emission from a diamond Light Emitting Diode (LED) which was demonstrated at the NATO ARW. This diamond LED can emitred, green, and blue light. The potential for "high tech" nanostructure electronic devices such as quantum transistors was described which mightsome day revolutionize electronics.
The prospectsofaluminum nitride for acusto devices,piezodevices, and electroluminescencedevices were discussed.
目次
Preface. Diamond:- Growth and Doping. Characterization and Properties. Applications. Amorphous and Diamond-Like Carbon Films:- Growth and Doping. Characterization and Properties. Applications. Other Wide Band Gap Semiconductors:- Growth and Doping. Characterization and Properties. Applications. Oral Presentations. Poster Presentations. Author Index. Key Word Index.
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