Process and device modeling for microelectronics

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Bibliographic Information

Process and device modeling for microelectronics

edited by Giorgio Baccarani

Elsevier, 1993

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Papers originating within research units of the MADESS project, Italy

Includes bibliographical references

Description and Table of Contents

Description

The 11 invited papers in this book, written by experts in their appropriate fields, report on current trends and significant research findings in the modeling and simulation of semiconductor devices and processes, monitoring the rapid scientific growth that has occurred in this area. The project "Materials and Devices for Solid-State Electronics" (MADESS), funded by Italy's National Research Council, started in 1987 and lasted 5 years. The project addressed five main research areas: VLSI technology and device physics; microwave and optoelectronic devices; sensors; semiconductor power devices; and reliability and diagnostics. Encompassing a large spectrum of activities ranging from material science to system architecture, research units included universities, public research laboratories and industry.

Table of Contents

  • Part 1 Process modeling: a new electron scattering model for X-ray lithography applications, G. Messina et al
  • Monte Carlo and molecular dynamics simulation applied to ion implementation, A.M. Mazzone. Part 2 Device modeling: 3-D simulation of silicon devices - physical models and numerical algorithms, P. Ciampolini et al
  • a generalized approach to the hydrodynamic model of semiconductor equations, M. Rudan et al
  • Monte Carlo simulation of silicon devices, A. Abramo et al
  • analytical modeling of the MOS transistor for the electrical silumation of integrated circuits, C.Turchedtti et al. Part 3 Model characterization and applications: impact-ionization effects in advanced Si bipolar transistors, G. Verzellesi et al
  • experimental analysis of temperature dependences of the S.H.R. lifetime in n-type silicon, S. Bellone and P. Spirito
  • the numerical simulation of floating gate non-volatile memory devices, S. Keeney et al
  • development of a CCD/CMOS VLSI technology especially tailored for smart optical sensors, G. Soncini et al
  • TCAD and empirical model building for process optimization and yield enhancement, M. Lissoni and C. Lombardi.

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