Molecular beam epitaxy : applications to key materials
Author(s)
Bibliographic Information
Molecular beam epitaxy : applications to key materials
（Materials science and process technology series）
Noyes Publications, c1995
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Note
Includes bibliographical references and index
Description and Table of Contents
Description
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Table of Contents
The Technology and Design of Molecular Beam Epitaxy SystemsMolecular Beam Epitaxy of High-Quality GaAs and AlGaAsGas-Source Molecular Beam Epitaxy: GaxIn1-xAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device PropertiesMolecular Beam Epitaxy of Wide Gap II-VI Semiconductor HeterostructuresElemental Semiconductor HeterostructuresuGrowth, Properties, and ApplicationsMBE Growth of High Tc SuperconductorsMBE Growth of Artificially-Layered Magnetic Metal StructuresReflection High Energy Electron Diffraction Studies of the Dynamics of Molecular Beam EpitaxyAcknowledgmentsAppendix: Two-Level DiffractionReferencesIndex
by "Nielsen BookData"
