The physics and applications of resonant tunnelling diodes
著者
書誌事項
The physics and applications of resonant tunnelling diodes
（Cambridge studies in semiconductor physics and microelectronic engineering, 2）
Cambridge University Press, 1995
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
This book gives a comprehensive description of the physics and applications of resonant tunnelling diodes. The opening chapters of the book set out the basic principles of coherent tunnelling theory. The effects of impurity scattering, femtosecond dynamics, non-equilibrium distribution and intrinsic bistabilities are then described in detail. The applications of RTDs, such as in high-frequency signal generation and multi-valued data storage, are also reviewed. The book closes with a chapter devoted to the more recent field of resonant tunnelling through laterally confined zero-dimensional structures. Covering all the key theoretical and experimental aspects of this stimulating area of research, the book will be of great value to graduate students of quantum transport physics and device engineering, as well as to researchers in both these fields.
目次
- Preface
- 1. Introduction
- 2. Introduction to resonant tunnelling in semiconductor heterostructures
- 3. Scattering-assisted resonant tunnelling
- 4. Femtosecond dynamics and non-equilibrium distribution of electrons in resonant tunneling diodes
- 5. High-speed and functional applications of resonant tunnelling diodes
- 6. Resonant tunnelling in low-dimensional double-barrier heterostructures
- Index.
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