Amorphous insulating thin films II : proceedings of Symposium A on Amorphous Insulating Thin Films II of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994
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Bibliographic Information
Amorphous insulating thin films II : proceedings of Symposium A on Amorphous Insulating Thin Films II of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994
(European Materials Research Society symposia proceedings, v. 46)
Elsevier, 1995
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Note
Includes bibliographical references and indexes
"Reprinted from: Journal of non-crystalline solids 187(1-3)"--T.p. verso
Description and Table of Contents
Description
These proceedings present an up-to-date review of the research being carried out in the field of amorphous insulating thin films. The papers are presented by scientists representing 20 different countries.
Table of Contents
- General - dielectrics in microelectronics - problems and perspectives, P. Balk
- silicon dioxide, oxidation and unusual structures, burried oxides - where we're going, J.-L. Leray
- silicon dioxide, deposition, fluorinated interlayer dielectric films in ULSI multilayer interconnections, T. Homma
- silicon dioxide, structure, defects and characterization
- silicon dioxide, defects and degradation
- silicon dioxide, charge trapping
- Si/SiO2 interface, characterization and electrical properties, enhanced 1/f noise due to near interfacial oxygen deficiency, D.M. Fleetwood et al
- hydrogen in MOS structures and oxides, theoretical results on hydrogen in MOS systems, A.H. Edwards, chemical reactions of hydrogenous species in Si/SiO2 systems, E.H. Poindexter
- nitrides, structure and defects, structural and bonding properties of amorphous silicon nitride films, S. Hasegaw et al
- silicon nitride, deposition
- ONO and nitrided oxides
- silicon oxynitride and other dielectrics, structural identification of point defects in amorphous silicon oxynitrides, Y. Cros
- high E materials and ferroelectrics
- optical applications, chemical interaction in ion-implanted amorphous SiO2 and application to formation and modification of nanosize colloids, H. Hosono. (Part contents)
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