Ion implantation technology-94 : proceedings of the Tenth International Conference on Ion Implantation Technology, Catania, Italy, June 13-17, 1994
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Ion implantation technology-94 : proceedings of the Tenth International Conference on Ion Implantation Technology, Catania, Italy, June 13-17, 1994
North-Holland, 1995
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Nuclear instruments and methods in physics research, section B: beam interactions with materials and atoms, vol.B96, 1-2, pt.1(pp.1-440) reprinted from
内容説明・目次
内容説明
The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters. The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
目次
- Part 1 Section i - advanced implanters and process control - invited papers - ion implantation from the past and into the future, S. Moffatt
- negative-ion implantation technique, J. Ishikawa et al
- charge neutralization in ion implanters, D.L. Smatlak et al
- section ii - profiles and modelling - invited papers - on the determination of two-dimensional carrier distributions, W. Vandervorst et al
- improved delineation technique for two dimensional dopant profiling, L. Gong et al
- section iii - materials science - silicon - invited papers - implantation and transient boron diffusion - the role of the silicon self-interstital, P.A. Stolk et al
- studies of point defect/dislocation loop interaction processes in silicon, K.S. Jones et al
- on the relation between dopant anomalous diffusion in si and end-of-range defects, A. Claverie et al
- section iv - materials science - compounds and alloys - invited papers - ion-beam induced relaxation of strained GexSi1-x layers, P. Kringhoj et al
- thermodynamic behaviour of GeO2 formed by oxygen implantation into relaxed Si0.5 alloy, J.P. Zhang et al
- section v - materials science - silicides - invited paper - ion beam synthesis of yttrium silicides in (111)Si, S. Jin et al
- section vi - materials science -optoelectronics - invited paper - ion implantation for optical applications, Buchal
- section vii - new applications in processing and devices - invited paper - application of advanced ion implantation techniques to flash memories, P. Cappelletti et al. Part 2 Section i - advanced implanter systems
- section ii - subsystems and components
- section iii - process control
- section iv - ion-solid interactions
- section v - materials science - silicon
- section vi - materials science - alloys and compounds
- section vii - materials science - silicides
- section viii - new applications in processing and devices.
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