InP HBTs : growth, processing, and applications
著者
書誌事項
InP HBTs : growth, processing, and applications
（The Artech House materials science library）
Artech House, c1995
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
This work provides a comprehensive overview of current InP HBT technology and its applications. Each chapter is written by a world-renowned expert on topics including crystal growth, processing, physics, modelling, and digital and analog circuits.
目次
- Part 1 Introduction: wet chemical etch mixtures for InP
- wet chemical etch mixtures for other III-V materials. Part 2 Growth of InP-based heterojunction bipolar transistors: substrate preparation
- growth behaviour and control
- doping
- N-type doping
- P-type dopants
- growth of device structures
- selective epitaxial growth. Part 3 Self-aligned processing of InP-based HBTs: wet chemical processing
- wet etching of InP and related compounds
- dry etch processing
- dry etching of InP and related compounds
- device results. Part 4 Non-equilibrium electron transport in heterojunction bipolar transistors: advantages of HBTs
- electron transport in semiconductors
- the semiclassical approach
- preliminary considerations
- effect of reducing xb on electron transport
- effect of reducing xc on collector transport
- ultra-high-frequency performance
- comparison of graded and abrupt junction HBTs
- comments on semiclassical understanding. Part 5 Device and circuit fabrication, device characteristics, and reliability: device and circuit fabrication
- performance of AlInAs/GaInAs HBT over temperature
- performance of InP-based double heterojunction bipolar transistors
- InP-based HBT reliability. Part 6 Radiation effects on InP-based heterojunction bipolar transistors: previous work
- experimental AlInAs/InGaAs total dose experiments
- comparison with GaAs/AlGaAs HBTs
- GaAs/AlGaAs transient dose results
- stimulation of transient ionizing radiation. Part 7 Device physics and modelling: basic device operation
- junction design
- submicron InP HBT for low-power ultrawideband applications
- current transport in abrupt emitter HBTs
- device modelling
- DC model
- small signal model
- large signal model
- noise
- strain-base InP HBT
- Gunn oscillations in the collector transit region. Part 8 High speed InP HBT circuits: an overview of InP technology
- current-mode logic. Part 9 Analog-to-digital converters using III-V HBTs: III-V HBT device characteristics
- a review of high-speed ADC architectures
- analog-to-digital converter components
- digital-to-analog converters
- layout and packaging considerations for ADC circuits
- future predictions. Part 10 Millimeter wave generation using InP HBT phototransistors: picosecond optoelectronic measurement system
- HBT as a photodetector
- transport equations
- optical gain
- optical gain G and current gain B
- transient response and bandwidth of a phototransistor
- millimeter wave generation by optically injecting HBTs
- CW optical mixing experiments.
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