Compound semiconductor strained-layer superlattices

Bibliographic Information

Compound semiconductor strained-layer superlattices

guest editor, Robert M. Biefeld

(Crystal properties and preparation, v. 21(1989))

Trans Tech Publications, c1989

Available at  / 3 libraries

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Note

Includes bibliographical references

Description and Table of Contents

Description

-Effect of Internal Piezoelectric Fields on the Electronic Structure and Optical Properties of Strained-Layer Superlattices -Metastability in Semiconductor Strained-Layer Structures -The Morphology of MOCVD-Grown Semiconductor Multilayers -Electrical Transport Studies of InGaAs/GaAs Strained-Layer Quantum-Well Structures -Device Structures Based on GaAsP/InGaAs Strained Layer Superlattices and Their Stability -The Preparation and Infrared Properties of In (AsSb) Strained-Layer Superlattices -Ion Implantation of III-V Compound Semiconductor Strained-Layer Semiconductors Systems -II-VI Strained-Layer Semiconductor Superlattices

Table of Contents

Effect of Internal Piezoelectric Fields on the Electronic Structure and Optical Properties of Strained-Layer Superlattices Metastability in Semiconductor Strained-Layer Structures The Morphology of MOCVD-Grown Semiconductor Multilayers Electrical Transport Studies of InGaAs/GaAs Strained-Layer Quantum-Well Structures Device Structures Based on GaAsP/InGaAs Strained Layer Superlattices and Their Stability The Preparation and Infrared Properties of In (AsSb) Strained-Layer Superlattices Ion Implantation of III-V Compound Semiconductor Strained-Layer Semiconductors Systems II-VI Strained-Layer Semiconductor Superlattices

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Details

  • NCID
    BA26103385
  • ISBN
    • 0878495878
  • Country Code
    us
  • Title Language Code
    eng
  • Text Language Code
    eng
  • Place of Publication
    Zürich, Switzerland ; Brookfield, Vt.
  • Pages/Volumes
    viii, 229 p.
  • Size
    25 cm
  • Parent Bibliography ID
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