Low-dimensional semiconductors : materials, physics, technology, devices
Author(s)
Bibliographic Information
Low-dimensional semiconductors : materials, physics, technology, devices
(Series on semiconductor science and technology, 3)(Oxford science publications)
Clarendon Press, 1995
- : hbk
- : pbk
Available at 15 libraries
  Aomori
  Iwate
  Miyagi
  Akita
  Yamagata
  Fukushima
  Ibaraki
  Tochigi
  Gunma
  Saitama
  Chiba
  Tokyo
  Kanagawa
  Niigata
  Toyama
  Ishikawa
  Fukui
  Yamanashi
  Nagano
  Gifu
  Shizuoka
  Aichi
  Mie
  Shiga
  Kyoto
  Osaka
  Hyogo
  Nara
  Wakayama
  Tottori
  Shimane
  Okayama
  Hiroshima
  Yamaguchi
  Tokushima
  Kagawa
  Ehime
  Kochi
  Fukuoka
  Saga
  Nagasaki
  Kumamoto
  Oita
  Miyazaki
  Kagoshima
  Okinawa
  Korea
  China
  Thailand
  United Kingdom
  Germany
  Switzerland
  France
  Belgium
  Netherlands
  Sweden
  Norway
  United States of America
Note
Includes bibliographical references and index
Description and Table of Contents
Description
This text is a first attempt to pull together the whole of semiconductor science and technology since 1970 in so far as semiconductor multilayers are concerned. Material, technology, physics and device issues are described with approximately equal emphasis, and form a single coherant point of view. The subject matter is the concern of over half of today's active semiconductor scientists and technologists, the remainder working on bulk semiconductors and devices.
It is now routine to design and the prepare semiconductor multilayers at a time, with independent control over the dropping and composition in each layer. In turn these multilayers can be patterned with features that as a small as a few atomic layers in lateral extent. The resulting structures open up many new ares of exciting solid state and quantum physics. They have also led to whole new generations of electronic and optoelectronic devices whose superior performance relates back to the
multilayer structures.
The principles established in the field have several decades to go, advancing towards the ultimate of materials engineering, the design and preparation of solids atom by atom.
The book should appeal equally to physicists, electronic engineers and materials scientists.
Table of Contents
- Preface
- Introduction
- 1. Resume of bulk semiconductor physics
- 2. III-V semiconductor homojunctions and heterojunctions
- 3. Fabrication technologies for semiconductor microstructures
- 4. Low dimensional physics
- 5. The two dimensional electron gas (2DEG)
- 6. The one dimensional electron gas (1DEG)
- 7. Hot electron phenomena
- 8. Tunnelling phenomena
- 9. Superlattices and minibands
- 10. Quantum wells and their optical properties
- 11. Quantum pillars and boxes: electronic and optical properties
- 12. Mesoscopic phenomena and coulomb blockade
- 13. Exotic materials combinations: new physics including strain
- 14. Silicon and silicon heterojunctions
- 15. Thermal, mechanical and other properties
- 16. Devices I: field effect and heterojunction bipolar transistors
- 17. Devices II: Microwave diodes
- 18. Devices III: lasers, modulators and detectors
- 19. Devices IV: infrared and solar devices
- 20. Amorphous semiconductor multilayers
- 21. Towards 2000
- 22. Radical alternatives
- Appendices
by "Nielsen BookData"