Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A.
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Bibliographic Information
Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A.
（Materials Research Society symposium proceedings, v. 379）
Materials Research Society, 1995
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Includes bibliographical references and index
Description and Table of Contents
Description
An interdisciplinary discussion of key materials issues and controversies in strained layer epitaxy is presented in this new volume from MRS. Research involving GeSi alloys and Si:C alloys are well represented. In the case of GeSi alloys, utilizing both strained and relaxed structures appears to be a strong component of the current research. Applications, devices and synthesis of improved relaxed and strained materials are featured. Special efforts to integrate the III-V and IV communities were also made during this symposium, and those efforts are reflected in the proceedings volume as well. Results on compositional graded layers in both the GeSi and III-V materials systems are presented. Topics include: general issues; ordering/low dimensional structures; characterization; device applications; growth of Si-based materials; and growth of compound semiconductors.
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